triaki N9260... oraz triak N830003 Te elementy to nie triaki tylko tranzystory.
STN9260
High voltage fast-switching
PNP power transistor
Features
■
High voltage capability
■
Fast switching speed
4
Applications
2
1
■
Lighting
■
Switch mode power supply
3
SOT-223
Description
This device is a high voltage fast-switching PNP
power transistor. It is manufactured using high
voltage multi epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining a wide RBSOA. The device is
designed for use in lighting applications and low
cost switch-mode power supplies.
Table 1.
I
Figure 1.
Internal schematic diagram
Device summary
Part number
Marking
Package
Packaging
STN9260
N9260
SOT-223
Tape and reel
August 2011
Doc ID 18326 Rev 2
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www.st.com
10
Electrical ratings
1
STN9260
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VBE = 0)
-600
V
VCEO
Collector-emitter voltage (IB = 0)
-600
V
VEBO
Emitter-base voltage (IC = 0)
-7
V
-0.5
A
-1
A
Base current
-0.25
A
IBM
Base peak current (tP & lt; 5 ms)
-0.5
A
PTOT
Total dissipation at Ta = 25 °C
1.6
W
TSTG
Storage temperature
-65 to 150
°C
150
°C
Value
Unit
78
°C/W
IC
ICM
IB
TJ
Table 3.
Symbol
RthJA
1.
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Collector current
Collector peak current (tP & lt; 5 ms)
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-ambient
(1)
Device mounted on PCB area of 1 cm².
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STN9260
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min.
Typ. Max. Unit
ICES
Collector cut-off current
VCE = -600 V
(VBE = 0)
-10
µA
IEBO
Emitter cut-off current
(IC = 0)
-1
µA
Collector-emitter
VCE(sus) (1) sustaining voltage
(IB = 0)
VEB = -7 V
IC = -10 mA
-600
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = -100 mA
IB = -10 mA
-1
V
VBE(sat) (1)
Base-emitter saturation
IC = -100 mA
voltage
IB = -10 mA
-1
V
hFE
tr
ts
tf
DC current gain
Resistive load
Rise time
Storage time
Fall time
IC = -10 mA
IC = -20 mA
VCE = -5 V
VCE = -5 V
VCC=-200 V, IC=-0.1 A
IB1=-10 mA, IB2=20 mA
Tp=30 µs
140
50
200
3.2
150
ns
µs
ns
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
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Electrical characteristics
STN9260
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
Figure 4.
Output curves up to VCE= -1 V
Figure 5.
Output curves up to VCE= -2 V
Figure 6.
DC current gain (VCE = -1 V)
Figure 7.
DC current gain (VCE = -5 V)
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STN9260
Figure 8.
Electrical characteristics
Collector-emitter saturation voltage Figure 9.
Figure 10. Base-emitter on voltage
Base-emitter saturation voltage
Figure 11. Capacitance variation
Figure 12. Reverse biased safe operating area
0.6
0.5
Ic [A]
0.4
hfe = 2
Vbeoff = -5V
Rbb = 0 Ω
L=1mH
Tj ≤ 125 °C
0.3
0.2
0.1
0
0
100
200
300
Vce [V]
400
500
600
700
800
AM10060v1
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Electrical characteristics
2.2
STN9260
Test circuits
Figure 13. Resistive load switching test circuit
1. Fast electronic switching
2. Non-inductive resistor
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STN9260
3
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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mm
Dim.
Min.
Typ.
A
Max.
1.80
A1
0.02
0.1
B
0.60
0.70
0.85
B1
2.90
3.00
3.15
c
0.24
0.26
0.35
D
6.30
6.50
6.70
e
2.30
e1
4.60
E
3.30
3.50
3.70
H
6.70
7.00
7.30
V
10°
0046067_M
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STN9260
4
Revision history
Revision history
Table 6.
Document revision history
Date
Revision
Changes
13-Dec-2010
1
Initial release.
03-Aug-2011
2
– Curves inserted
– Minor text changes
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STN9260
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