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SEMICONDUCTOR
KTA1241
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
B
D
FEATURES
A
hFE=100 320 (VCE=-2V, IC=-0.5A).
hFE=70(Min.) (VCE=-2V, IC=-4A).
DIM
A
B
C
D
Low Collector Saturation Voltage.
G
C
: VCE(sat)=-0.5V (IC=-3A, IB=-75mA).
S
Q
High Power Dissipation : PC=1W.
R
J
K
F
F
H
MAXIMUM RATING (Ta=25
)
RATING
UNIT
Collector-Base Voltage
VCBO
-35
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-8
V
Collector Current
IC
-5
IB
-0.5
A
Collector Power Dissipation
PC
1
Tj
25
1.25
Φ1.50
0.10 MAX
_
12.50 + 0.50
1.00
150
Tstg
1.15 MAX
1.27
1.70 MAX
0.55 MAX
_
14.00 + 0.50
0.35 MIN
_
0.75 + 0.10
4
W
Junction Temperature
E
F
G
H
J
K
L
M
A
Base Current
H
M
-55 150
1
N
2
3
H
L
D
SYMBOL
O
CHARACTERISTIC
H
E
M
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
N
O
P
DEPTH:0.2
P
Q
R
S
N
1. EMITTER
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
2. COLLECTOR
3. BASE
TO-92L
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-35V, IE=0
-
-
-100
nA
Emitter Cut-off Current
IEBO
VEB=-8V, IC=0
-
-
-100
nA
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-10mA, IB=0
-20
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-1mA, IC=0
-8
-
-
V
VCE=-2V, IC=-0.5A
100
-
320
hFE(2)
VCE=-2V, IC=-4A
70
-
-
VCE(sat)
IC=-3A, IB=-75mA
-
-
-0.5
V
Base-Emitter Voltage
VBE
VCE=-2V, IC=-4A
-
-
-1.5
V
Transition Frequency
fT
VCE=-2V, IC=-0.5A
-
170
-
MHz
VCB=-10V, IE=0, f=1MHz
-
62
-
pF
hFE(1) (Note)
DC Current Gain
Collector-Emitter Saturation Voltage
Cob
Collector Output Capacitance
Note : hFE Classification O:100
1994. 3. 23
200, Y:160
Revision No : 0
320
1/2
KTA1241
1994. 3. 23
Revision No : 0
2/2