Witam. Mogą też takie pasować zamiennik za 2SA1492=BD250E 2SC3856= BD249F878622 878626 Pomijając to że parametry mocno odbiegają od oryginału, to gdzie kolega widział BD250E i BD249F ? Bo wszyscy producenci wspominają tylko o suffix'ach A, B, C. Zbyt niskie Ucemax, beta, ft. Regulamin, pkt 3.1.11. Nie wysyłaj wiadomości, które nic nie wnoszą do dyskusji. Wprowadzają w błąd, są niebezpieczne czy nie rozwiązują problemu użytkownika.
BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
BD249 Series
●
125 W at 25°C Case Temperature
●
25 A Continuous Collector Current
●
40 A Peak Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-emitter voltage (RBE = 100 Ω)
BD250B
VCER
-70
BD250C
-115
-45
BD250A
BD250B
V CEO
-60
V
-80
-100
BD250C
VEBO
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
-5
V
IC
-25
A
ICM
-40
A
IB
Emitter-base voltage
-5
A
Ptot
125
W
Ptot
3
W
½LIC2
90
mJ
°C
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
250
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 1 W/°C.
Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
NOITAMROFNI
NOTES: 1.
2.
3.
4.
V
-90
BD250
Collector-emitter voltage (IC = -30 mA)
UNIT
-55
BD250
BD250A
VALUE
TCUDORP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
BD250
V(BR)CEO
Collector-emitter
breakdown voltage
BD250A
IB = 0
(see Note 5)
MAX
-60
BD250B
-80
BD250C
IC = -30 mA
TYP
-100
V
VCE = -55 V
ICEO
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
VBE = 0
BD250
-0.7
Collector-emitter
VCE = -70 V
VBE = 0
BD250A
-0.7
cut-off current
VCE = -90 V
VBE = 0
BD250B
-0.7
VCE = -115 V
ICES
UNIT
-45
VBE = 0
BD250C
-0.7
Collector cut-off
VCE = -30 V
IB = 0
BD250/250A
-1
current
VCE = -60 V
IB = 0
BD250B/250C
-1
VEB =
-5 V
IC = 0
Emitter cut-off
current
Forward current
transfer ratio
-1
VCE =
-4 V
-4 V
IC = -15 A
VCE =
-4 V
IC = -25 A
Collector-emitter
IB =
-1.5 A
IB =
-5 A
VCE =
-4 V
IC = -15 A
voltage
VCE =
-4 V
IC = -25 A
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
mA
10
5
IC = -25 A
Base-emitter
(see Notes 5 and 6)
IC = -15 A
saturation voltage
mA
25
IC = -1.5 A
VCE =
mA
-1.8
(see Notes 5 and 6)
-4
-2
(see Notes 5 and 6)
-4
VCE = -10 V
IC =
- 1A
f = 1 kHz
IC =
-1 A
f = 1 MHz
V
25
VCE = -10 V
V
3
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1
°C/W
RθJA
Junction to free air thermal resistance
42
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
†
MIN
TYP
ton
IB(on) = -0.5 A
IB(off) = 0.5 A
0.2
µs
VBE(off) = 5 V
RL = 5 Ω
tp = 20 µs, dc ≤ 2%
0.4
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
TCUDORP
2
IC = -5 A
Turn-off time
NOITAMROFNI
†
Turn-on time
toff
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS636AD
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - DC Current Gain
1000
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
VCE = -4 V
TC = 25°C
tp = 300 µs, duty cycle & lt; 2%
100
10
1
-0·1
-1·0
-10
-100
TCS636AB
-10
-1·0
-0·1
-0·01
-0·001
-0·01
IC - Collector Current - A
-0·1
-1·0
-10
-25 A
-20 A
-15 A
-10 A
-100
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·8
VBE - Base-Emitter Voltage - V
IC =
IC =
IC =
IC =
IC = -300 mA
IC = -1 A
IC = -3 A
TCS636AC
VCE = -4 V
TC = 25°C
-1·6
-1·4
-1·2
-1·0
-0·8
-0·6
-0·1
-1·0
-10
-100
IC - Collector Current - A
Figure 3.
NOITAMROFNI
TCUDORP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-100
SAS636AB
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
-10
-1·0
-0·1
BD250
BD250A
BD250B
BD250C
-0·01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS635AA
Ptot - Maximum Power Dissipation - W
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
NOITAMROFNI
TCUDORP
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.