Witam, Dzięki że to czytasz. Posiadam chińską przetwornicę samochodową DY8102 DC 12=>230 AC http://obrazki.elektroda.pl/2981147700_1464516241_thumb.jpg Przetwornica działała dobrze do czasu gdy nie podczas pracy nie uderzyła o coś. Domyśliłem, się że 4 tranzystory kluczujące po stronie pierwotnej do niczego nie były przeczepione i prawdopodobnie jeden z nich dotknął obudowy i uległ uszkodzeniu. Zadziałało zabezpieczenie 10A i przetwornica się wyłączyła. Po rozebraniu i sprawdzeniu części elementów okazało się że 2 tranzystory 87n03lt są nie sprawne oraz 1 tranzystor wysokiego napięcia po stronie wtórnej cmt04n60 . http://obrazki.elektroda.pl/1329455400_1464519030_thumb.jpg Moja diagnoza uszkodzeniu uległy tylko 3 tranzystory . Poniżej wynik badania sprawnych. cmt04n60 => http://obrazki.elektroda.pl/1380607700_1464517415_thumb.jpg 87n03lt => http://obrazki.elektroda.pl/6159607100_1464517418_thumb.jpg Ponieważ ciężko dostać oryginalne tranzystory. Pytanie czy nożna by je zastąpić np. 757639 AOTF11C60 zamiast cmt04n60 864955 oraz 757640 irl2203n zamiast 87n03lt. 757637 Pozdrawiam.
AOT11C60/AOB11C60/AOTF11C60
600V,11A N-Channel MOSFET
General Description
Product Summary
The AOT11C60 & AOB11C60 & AOTF11C60 are
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
700
IDM
80A
RDS(ON),max
& lt; 0.44Ω
Qg,typ
30nC
Eoss @ 400V
5.1µJ
100% UIS Tested
100% Rg Tested
For Halogen Free add " L " suffix to part number:
AOT11C60L & AOB11C60L & AOTF11C60L
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
G
AOT11C60
D
S
G
AOTF11C60
D
G
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
S
AOB11C60
Absolute Maximum Ratings TA=25°C unless otherwise noted
AOT11C60/AOB11C60
Parameter
Symbol
Drain-Source Voltage
VDS
600
Gate-Source Voltage
G
S
S
AOTF11C60
±30
11
ID
Units
V
V
11*
9
9*
A
Pulsed Drain Current C
IDM
80
Avalanche Current C,J
IAR
11
A
Repetitive avalanche energy C,J
EAR
60
mJ
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
EAS
750
100
20
mJ
dv/dt
Rev.3.0: Auguest 2014
50
W
0.4
-55 to 150
W/ oC
°C
300
°C
278
PD
2.2
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
TL
purpose, 1/8 " from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Case-to-sink A
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
V/ns
AOT11C60/AOB11C60
65
0.5
0.45
www.aosmd.com
AOTF11C60
65
-2.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOT11C60/AOB11C60/AOTF11C60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
Typ
Max
Units
600
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.55
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.5A
gFS
Forward Transconductance
VDS=40V, ID=5.5A
12
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
±100
3
µA
4
5
nΑ
V
0.36
0.44
Ω
1
V
S
IS
Maximum Body-Diode Continuous Current
11
A
ISM
Maximum Body-Diode Pulsed Current C
80
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
2000
pF
84
pF
60
pF
107
VGS=0V, VDS=100V, f=1MHz
pF
VGS=0V, VDS=0 to 480V, f=1MHz
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
2.8
pF
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
3.5
Ω
Co(tr)
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
30
VGS=10V, VDS=480V, ID=11A
Gate Drain Charge
tD(on)
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
nC
nC
4
Turn-On DelayTime
tr
42
14
nC
50
ns
VGS=10V, VDS=300V, ID=11A,
RG=25Ω
50
ns
70
ns
32
ns
IF=11A,dI/dt=100A/µs,VDS=100V
485
Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V
7.2
ns
µC
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using & lt; 300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=5A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: Auguest 2014
www.aosmd.com
Page 2 of 6
AOT11C60/AOB11C60/AOTF11C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
8V
-55°C
VDS=40V
10V
24
7V
10
ID(A)
ID (A)
18
6.5V
125°C
12
1
6V
6
25°C
VGS=5.5V
0
0
5
10
15
20
25
0.1
30
2
4
VDS (Volts)
Fig 1: On-Region Characteristics
1.0
8
10
Normalized On-Resistance
3
0.8
RDS(ON) (Ω)
6
VGS(Volts)
Figure 2: Transfer Characteristics
0.6
VGS=10V
0.4
0.2
5
10
15
20
VGS=10V
ID=5.5A
2
1.5
1
0.5
0
-100
0.0
0
2.5
25
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1E+02
1.2
40
1E+00
IS (A)
BVDSS (Normalized)
1E+01
1.1
1
125°C
1E-01
25°C
1E-02
0.9
1E-03
0.8
-100
1E-04
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev.3.0: Auguest 2014
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT11C60/AOB11C60/AOTF11C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
Ciss
VDS=480V
ID=11A
1000
Capacitance (pF)
VGS (Volts)
12
9
6
Coss
100
10
Crss
3
1
0
0
10
20
30
40
0.1
50
10
100
1000
12
8
Eoss(uJ)
10
15
Current rating ID(A)
12
6
Eoss
4
9
6
3
2
0
0
0
100
200
300
400
500
600
0
25
50
75
100
125
150
TCASE (°C)
Figure 10: Current De-rating (Note B)
VDS (Volts)
Figure 9: Coss stored Energy
100
100
10µs
RDS(ON)
limited
10
10
100µs
1ms
DC
1
10ms
0.1
10µs
RDS(ON)
limited
ID (Amps)
ID (Amps)
1
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100µs
1ms
1
10ms
DC
0.1s
0.1
1s
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.01
0.01
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)11C60 (Note F)
Rev.3.0: Auguest 2014
www.aosmd.com
1
10
100
1000
VDS (Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF11C60 (Note F)
Page 4 of 6
AOT11C60/AOB11C60/AOTF11C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT(B)11C60 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF11C60(Note F)
Rev.3.0: Auguest 2014
www.aosmd.com
Page 5 of 6
AOT11C60/AOB11C60/AOTF11C60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VD
C
-
Qgs
Q
gd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
R
L
Vds
Vds
DU
T
Vgs
+
VD
C
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR 1/2 LI
=
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DU
T
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.3.0: Auguest 2014
L
Isd
+
VD
C
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6