Możesz zastosować: BTA16/600B Szczegółowe dane na stronie 3
BTA/BTB16 and T16 Series
®
16A TRIACS
SNUBBERLESS™ , LOGIC LEVEL & STANDARD
MAIN FEATURES:
A2
Symbol
Value
Unit
IT(RMS)
16
A
VDRM/VRRM
600 and 800
V
IGT (Q1)
10 to 50
mA
G
A1
A2
A1 A2
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB16 and T16 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in applications
such as static relays, heating regulation, induction
motor starting circuits... or for phase control
operation in light dimmers, motor speed
controllers, ...
The snubberless versions (BTA/BTB...W and T16
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734).
G
D2PAK
(T16-G)
A2
A1
A2
G
A1
A2
G
TO-220AB
(BTB16)
TO-220AB Insulated
(BTA16)
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
Parameter
RMS on-state current
(full sine wave)
Value
D2²PAK
A
Tc = 100°C
TO-220AB
16
TO-220AB Ins.
ITSM
I ²t
dI/dt
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
VDSM/VRSM Non repetitive surge peak off-state
voltage
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
April 2002 - Ed: 5A
Unit
Tc = 85°C
F = 60 Hz
t = 16.7 ms
168
F = 50 Hz
t = 20 ms
160
A
144
tp = 10 ms
A² s
F = 120 Hz
Tj = 125°C
50
A/µs
tp = 10 ms
Tj = 25°C
VDRM/VRRM
V
tp = 20 µs
Tj = 125°C
4
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
+ 100
1/7
BTA/BTB16 and T16 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
T16
BTA/BTB16
Unit
T1635
IGT (1)
VGT
VGD
VD = VDRM
IH (2)
IL
10
35
50
mA
MAX.
1.3
V
Tj = 125°C
I - II - III
MIN.
0.2
V
MAX.
15
35
50
mA
MAX.
50
25
50
70
mA
60
30
60
80
MIN.
500
40
500
1000
V/µs
-
8.5
-
-
A/ms
-
3.0
-
-
8.5
I - III
35
-
8.5
14
II
VD = 67 % VDRM gate open Tj = 125°C
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs
Tj = 125°C
(dV/dt)c = 10 V/µs
Tj = 125°C
Without snubber
s
35
I - II - III
IG = 1.2 IGT
dV/dt (2)
BW
MAX.
IT = 500 mA
RL = 3.3 kΩ
CW
I - II - III
RL = 33 Ω
VD = 12 V
SW
Tj = 125°C
MIN.
STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB16
C
IGT (1)
25
50
I - II - III
IV
VGT
VGD
VD = VDRM
IH (2)
IG = 1.2 IGT
MAX.
1.3
V
ALL
MIN.
0.2
V
IT = 500 mA
IL
MAX.
ALL
RL = 33 Ω
VD = 12 V
RL = 3.3 kΩ
Tj = 125°C
MAX.
I - III - IV
25
MAX.
50
mA
mA
40
60
120
MIN.
200
400
V/µs
MIN.
VD = 67 % VDRM gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 7 A/ms
mA
80
5
10
V/µs
Value
Unit
II
dV/dt (2)
50
100
Unit
B
Tj = 125°C
STATIC CHARACTERISTICS
Symbol
Test Conditions
VTM (2)
ITM = 22.5 A
Vto (2)
tp = 380 µs
Tj = 25°C
MAX.
1.55
V
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Rd (2)
Dynamic resistance
Tj = 125°C
MAX.
25
mΩ
IDRM
VDRM = VRRM
Tj = 25°C
5
µA
2
mA
IRRM
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
2/7
Tj = 125°C
MAX.
BTA/BTB16 and T16 Series
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c)
Value
Junction to case (AC)
Junction to ambient
2.1
D²PAK
°C/W
1.2
TO-220AB Insulated
Rth(j-a)
D²PAK
TO-220AB
Unit
45
S = 1 cm²
TO-220AB
°C/W
60
TO-220AB Insulated
S: Copper surface under tab
PRODUCT SELECTOR
Voltage(xxx)
Sensitivity
Type
Package
X
50 mA
Standard
TO-220AB
X
X
50 mA
Snubberless
TO-220AB
BTA/BTB16-xxxC
X
X
25 mA
Standard
TO-220AB
BTA/BTB16-xxxCW
X
X
35 mA
Snubberless
TO-220AB
BTA/BTB16-xxxSW
X
X
10 mA
Logic level
TO-220AB
T1635-xxxG
X
X
35 mA
Snubberless
D²PAK
Part Number
600 V
800 V
BTA/BTB16-xxxB
X
BTA/BTB16-xxxBW
ORDERING INFORMATION
BT A 16 -
600
BW
(RG)
TRIAC
SERIES
INSULATION:
A: insulated
B: non insulated
SENSITIVITY & TYPE
B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
CW: 35mA SNUBBERLESS
SW: 10mA LOGIC LEVEL
VOLTAGE:
600: 600V
800: 800V
CURRENT: 16A
T 16 35
-
600 G
PACKING MODE
Blank: Bulk
RG: Tube
(-TR)
TRIAC
SERIES
PACKAGE:
G: D2PAK
CURRENT: 16A
VOLTAGE:
600: 600V
800: 800V
SENSITIVITY:
35: 35mA
PACKING MODE:
Blank: Tube
-TR: Tape & Reel
3/7
BTA/BTB16 and T16 Series
OTHER INFORMATION
Part Number
Weight
Marking
Base
quantity
Packing
mode
BTA/BTB16-xxxyz
BTA/BTB16xxxyz
2.3 g
250
Bulk
BTA/BTB16-xxxyzRG
BTA/BTB16-xxxyz
2.3 g
50
Tube
T1635-xxxG
T1635xxxG
1.5 g
50
Tube
T1635-xxxG-TR
T1635xxxG
1.5 g
1000
Tape & reel
Note: xxx = voltage, y = sensitivity, z = type
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
20
18
16
14
12
10
8
6
4
2
0
Fig. 2-1: RMS on-state current versus case
temperature (full cycle).
P (W)
IT(RMS) (A)
IT(RMS) (A)
0
2
4
6
8
10
12
14
16
Fig. 2-2: D²PAK RMS on-state current versus
ambient temperature (printed circuit board FR4,
copper thickness: 35 µm), full cycle.
18
16
14
12
10
8
6
4
2
0
BTB/T16
BTA
Tc(°C)
0
25
50
75
100
125
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
IT(RMS) (A)
K=[Zth/Rth]
4.0
1E+0
2
D PAK
2
(S=1cm )
3.5
Zth(j-c)
3.0
2.5
1E-1
2.0
Zth(j-a)
1.5
1.0
0.5
0.0
4/7
tp (s)
Tamb(°C)
0
25
50
75
100
125
1E-2
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
BTA/BTB16 and T16 Series
Fig. 4:
values)
On-state
characteristics
(maximum
Fig. 5: Surge peak on-state current versus
number of cycles.
ITM (A)
ITSM (A)
200
Tj max
100
10
Tj=25°C
Tj max:
Vto = 0.85 V
Rd = 25 mΩ
VTM (V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp & lt; 10ms, and corresponding value of I²t.
180
160
140
120
100
80
60
40
20
0
t=20ms
One cycle
Non repetitive
Tj initial=25°C
Repetitive
Tc=85°C
Number of cycles
1
10
100
1000
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
ITSM (A), I²t (A²s)
2.5
3000
Tj initial=25°C
2.0
IGT
dI/dt limitation:
50A/µs
1000
1.5
IH & IL
1.0
ITSM
0.5
I²t
Tj(°C)
tp (ms)
100
0.01
0.10
1.00
10.00
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
0.0
-40
0
20
40
60
80
100
120
140
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
6
2.0
1.8
5
SW
C
1.6
1.4
-20
4
B
1.2
BW/CW/T1635
1.0
3
2
0.8
0.6
0.4
0.1
1
(dV/dt)c (V/µs)
1.0
10.0
100.0
0
Tj (°C)
0
25
50
75
100
125
5/7
BTA/BTB16 and T16 Series
Fig. 10:D²PAK Thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm).
Rth(j-a) (°C/W)
80
2
D PAK
70
60
50
40
30
20
10
0
S(cm²)
0
4
8
12
16
20
24
28
32
36
40
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
DIMENSIONS
B
REF.
C
Millimeters
Inches
b2
Min.
L
F
I
A
l4
c2
a1
l3
l2
a2
b1
M
c1
e
6/7
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
l2
l3
M
Typ.
15.20
Max.
Min.
Typ.
15.90 0.598
3.75
Max.
0.625
0.147
13.00
14.00 0.511
0.551
10.00
10.40 0.393
0.409
0.61
0.88 0.024
0.034
1.23
1.32 0.048
0.051
4.40
4.60 0.173
0.181
0.49
0.70 0.019
0.027
2.40
2.72 0.094
0.107
2.40
2.70 0.094
0.106
6.20
6.60 0.244
0.259
3.75
3.85 0.147
0.151
15.80 16.40 16.80 0.622 0.646 0.661
2.65
2.95 0.104
0.116
1.14
1.70 0.044
0.066
1.14
1.70 0.044
0.066
2.60
0.102
BTA/BTB16 and T16 Series
PACKAGE MECHANICAL DATA
D²PAK (Plastic)
DIMENSIONS
REF.
A
E
Min.
C2
L2
D
L
L3
A1
B2
Millimeters
R
C
B
G
A2
2.0 MIN.
FLAT ZONE
V2
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
R
V2
4.30
2.49
0.03
0.70
1.25
0.45
1.21
8.95
10.00
4.88
15.00
1.27
1.40
Typ.
Min.
Typ.
Max.
4.60
2.69
0.23
0.93
1.40
0.40
0°
Max.
Inches
0.169
0.181
0.098
0.106
0.001
0.009
0.027
0.037
0.048 0.055
0.60 0.017
0.024
1.36 0.047
0.054
9.35 0.352
0.368
10.28 0.393
0.405
5.28 0.192
0.208
15.85 0.590
0.624
1.40 0.050
0.055
1.75 0.055
0.069
0.016
8°
0°
8°
FOOTPRINT DIMENSIONS (in millimeters)
D²PAK (Plastic)
16.90
10.30
5.08
1.30
3.70
8.90
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
7/7
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.