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INTEGRATED CIRCUITS
DATA SHEET
TDA1562Q
70 W high efficiency power
amplifier with diagnostic facility
Preliminary specification
File under Integrated Circuits, IC01
1998 Apr 07
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
FEATURES
• Fast mute on supply voltage drops
• Very high output power, operating from a single low
supply voltage
• Quick start option (e.g. car-telephony/navigation)
• Low power dissipation, when used for music signals
• Load dump protection
• Switches to low output power at too high case
temperatures
• Short-circuit safe to ground, supply voltage and across
the load
• Few external components
• Low power dissipation in any short-circuit condition
• Fixed gain
• Protected against electrostatic discharge
• Differential inputs with high common mode rejection
• Thermally protected
• Mode select pin (on, mute and standby)
• Flexible leads.
• Low (delta) offset voltage at the outputs
• Status I/O pin (class-H, class-B and fast mute)
• All switching levels with hysteresis
GENERAL DESCRIPTION
• Diagnostic pin with information about:
The TDA1562Q is a monolithic integrated 70 W/4 Ω
Bridge-Tied Load (BTL) class-H high efficiency power
amplifier in a 17-lead DIL-bent-SIL plastic power
package.
– Dynamic Distortion Detector (DDD)
– Any short-circuit at outputs
– Open load detector
The device can be used for car audio systems (e.g. car,
radio and boosters) as well as mains fed applications (e.g.
midi/mini audio combinations and TV sound).
– Temperature protection.
• No switch-on or switch-off plops
QUICK REFERENCE DATA
Test conditions: VP = 14.4 V; RL = 4 Ω; Rs = 0 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
operating
8
14.4
18
V
non-operating
−
−
30
V
load dump
VP
supply voltage
CONDITIONS
−
−
45
V
Iq(tot)
total quiescent current
on and mute;
RL = open circuit
−
110
150
mA
Istb
standby current
standby
−
1
50
µA
VOO
output offset voltage
on and mute
−
−
100
mV
on ↔ mute
∆VOO
delta output offset voltage
−
−
30
mV
Gv
voltage gain
25
26
27
dB
Zi(dif)
differential input impedance
90
150
−
kΩ
Po
output power
45
55
−
W
THD
total harmonic distortion
THD = 0.5%
THD = 10%
60
70
−
W
Po = 1 W
−
0.03
−
%
Po = 20 W
−
0.06
−
%
DDD active
−
10
−
%
SVRR
supply voltage ripple rejection
on and mute
60
70
−
dB
CMRR
common mode rejection ratio
on
70
80
−
dB
ISRR
input signal rejection ratio
mute
80
90
−
dB
Vn(o)
noise output voltage
on
−
100
150
µV
1998 Apr 07
2
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
TDA1562Q
DESCRIPTION
DBS17P
VERSION
plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
BLOCK DIAGRAM
C1−
handbook, full pagewidth
3
status I/O
mode
select
16
4
CLASS-B
CLASS-H
FAST MUTE
C1+
5
9
VP2
10
LOAD DUMP
PROTECTION
TEMPERATURE
SENSOR
disable
STANDBY
MUTE
ON
VP1
LIFT-SUPPLY
CURRENT
PROTECTION
VP*
IN+
1
+
PREAMP
−
75
kΩ
75
kΩ
Vref
−
PREAMP
+
2
TDA1562Q
LOAD
DETECTOR
DYNAMIC
DISTORTION
DETECTOR
8
11
POWERSTAGE
diagnostic
OUT−
VP*
14
disable
LIFT-SUPPLY
TEMPERATURE
PROTECTION
15
C2−
15 kΩ
signal 17
GND
OUT+
DIAGNOSTIC
INTERFACE
FEEDBACK
CIRCUIT
IN−
7
POWERSTAGE
6
PGND1
reference
voltage
MGL264
13
C2+
Fig.1 Block diagram.
1998 Apr 07
3
12
PGND2
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
PINNING
SYMBOL
PIN
DESCRIPTION
IN+
1
signal input (positive)
IN−
2
signal input (negative)
C1−
3
negative terminal of lift electrolytic
capacitor 1
MODE
4
mode select input
C1+
5
positive terminal of lift electrolytic
capacitor 1
PGND1
6
power ground 1
OUT+
7
positive output
DIAG
8
diagnostic output (open collector)
VP1
9
supply voltage 1
VP2
10
supply voltage 2
VP1 9
OUT−
11
negative output
VP2 10
PGND2
12
power ground 2
OUT− 11
C2+
13
positive terminal of lift electrolytic
capacitor 2
Vref
14
internal reference voltage
C2−
15
negative terminal of lift electrolytic
capacitor 2
STAT
16
17
IN+ 1
IN− 2
C1− 3
MODE 4
C1+ 5
PGND1 6
OUT+ 7
DIAG 8
TDA1562Q
PGND2 12
C2+ 13
Vref 14
C2− 15
status I/O
SGND
handbook, halfpage
signal ground
STAT 16
SGND 17
MGL263
Fig.2 Pin configuration.
1998 Apr 07
4
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
FUNCTIONAL DESCRIPTION
Status I/O input (pin STAT)
The TDA1562Q contains a mono class-H BTL output
power amplifier. At low output power, up to 18 W, the
device operates as a normal BTL amplifier. When a larger
output voltage swing is required, the internal supply
voltage is lifted by means of the external electrolytic
capacitors. Due to this momentarily higher supply voltage
the obtainable output power is 70 W.
INPUT
This input has 3 possibilities:
1. LOW, ‘fast mute’: the circuit remains switched on, but
the input signal is suppressed
2. MID, ‘class-B’: the circuit operates as class-B
amplifier, the high power supply voltage is disabled,
independent of the case temperature
In normal use, when the output is driven with music-like
signals, the high output power is only needed during a
small percentage of time. Under the assumption that a
music signal has a normal (Gaussian) amplitude
distribution, the reduction in dissipation is about 50% when
compared to a class-B output amplifier with the same
output power. The heatsink should be designed for use
with music signals. If the case temperature exceeds
120 °C, the device will switch back from class-H to class-B
operation. The high power supply voltage is then disabled
and the output power is limited to 20 W.
3. HIGH, ‘class-H’: the circuit operates as class-H
amplifier, the high power supply voltage is enabled,
independent of the case temperature.
When the circuit is switched from fast mute to class-B/H or
vice versa the switching is immediately carried out. When
the circuit is switched from class-B to class-H or vice versa
the actual switching takes place at a zero crossing of the
input signal.
OUTPUT
When the supply voltage drops below the minimum
operating level, the amplifier will be muted immediately.
This output has 3 possibilities:
1. LOW, ‘mute’: acknowledge of muted amplifier
Mode select input (pin MODE)
2. MID, ‘class-B’: the circuit operates as class-B
amplifier, the high power supply voltage is disabled,
caused by the case temperature Tc & gt; 120 °C
This pin has 3 modes:
1. LOW, ‘standby’: the complete circuit is switched off,
the supply current is very low
3. HIGH, ‘class-H’: the circuit operates as class-H
amplifier, the high power supply voltage is enabled,
because the case temperature Tc & lt; 120 °C.
2. MID, ‘mute’: the circuit is switched on, but the input
signal is suppressed
When the circuit is switched from class-B to class-H or vice
versa the actual switching takes place at a zero crossing
of the input signal.
3. HIGH, ‘on’: normal operation, the input signal is
amplified by 26 dB.
When the circuit is switched from mute to on or vice versa
the actual switching takes place at a zero crossing of the
input signal. The circuit contains a quick start option, i.e.
when it is switched directly from standby to on,
the amplifier is fully operational within 50 ms (important for
applications like car telephony and car navigation).
1998 Apr 07
The status I/O pins of maximum 8 devices may be tied
together for synchronizing purposes.
5
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
handbook, full pagewidth
supply
voltage
TDA1562Q
on
mute
0
HIGH
mode select
input
MID
LOW
Vref
reference
voltage
VRT
0
HIGH
status I/O
input
MID
LOW
HIGH
status I/O
output
class-H (Tc & lt; 120 °C)
MID
class-B (Tc & gt; 120 °C)
LOW
output voltage
across load
0
quick start
mute
zerocross change
class B/H-operation
fast mute
function
zerocross mute
function
supply mute
function
MGL272
Fig.3 Switching characteristics.
1998 Apr 07
6
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
Diagnostic output (pin DIAG)
TEMPERATURE DETECTION
DYNAMIC DISTORTION DETECTOR (DDD)
Just before the temperature protection becomes active the
diagnostic output becomes continuously LOW.
At the onset of clipping of the output stages, the DDD
becomes active. This information can be used to drive a
sound processor or DC-volume control to attenuate the
input signal and so limit the distortion.
Load detection: directly after the circuit is switched from
standby to mute or on, a build in detection circuit checks
whether a load is present. The results of this check can be
detected at the diagnostic output, by switching the mode
select input in the mute mode.
SHORT-CIRCUIT PROTECTION
Since the diagnostic output is an open collector output,
more devices can be tied together.
When a short-circuit occurs at the outputs to ground or to
the supply voltage, the output stages are switched off.
They will be switched on again approximately 20 ms after
removing the short-circuit. During this short-circuit
condition the diagnostic output is continuously LOW.
When a short-circuit occurs across the load, the output
stages are switched off during approximately 20 ms. After
that time is checked during approximately 50 µs whether
the short-circuit is still present. During this short-circuit
condition the diagnostic output is LOW for 20 ms and high
for 50 µs. The power dissipation in any short-circuit
condition is very low.
HIGH
handbook, full pagewidth
mode select
input
MID
LOW
output voltage
across load
0
HIGH
diagnostic
output
no load
LOW
t
short-circuit to
supply or ground
clipping signal
Fig.4 Diagnostic information.
1998 Apr 07
7
short-circuit
across load
MGL265
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
status I/O: high
class-H
handbook, full pagewidth
maximum output
voltage swing
status I/O: open
class-B
0
HIGH
diagnostic
output
LOW
HIGH
status I/O
output
MID
LOW
100
120
145
150
160
Tj (°C)
MGL266
Fig.5 Behaviour as a function of temperature.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
18
V
−
30
V
load dump; tr & gt; 2.5 ms;
T = 50 ms
−
45
V
non-repetitive peak output current
−
10
A
repetitive peak output current
IOSM
operating
non-operating
VP
−
8
A
supply voltage
Vsc
short-circuit safe voltage
−
18
V
Tstg
storage temperature
−55
+150
°C
Tamb
ambient temperature
−40
−
°C
Tj
junction temperature
−
150
°C
Ptot
total power dissipation
−
60
W
note 1
Note
1. Tj is a theoretical temperature which is based on a simplified representation of the thermal behaviour of the device.
Tj = Tc + P × Rth(j-c), where Rth(j-c) is a fixed value to be used for the calculation of Tj. The rating for Tj limits the
allowable combinations of power dissipation P and case temperature Tc (in accordance with IEC 747-1).
1998 Apr 07
8
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-c)
thermal resistance from junction to case
Rth(j-a)
thermal resistance from junction to ambient
VALUE
UNIT
1.5
K/W
40
in free air
K/W
DC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; Tamb = 25 °C; measurements in accordance with Fig.10; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies VP1 and VP2 (pins 9 and 10)
VP
supply voltage
8
Vth+
supply threshold voltage
mute → on
−
Vth−
supply threshold voltage
on → mute
7
VPH1
hysteresis (Vth+ − Vth−)
−
Iq
quiescent current
on and mute;
RL = open circuit
Istb
standby current
14.4
18
V
−
9
V
−
−
V
200
−
mV
−
110
150
mA
standby
−
1
50
µA
Amplifier outputs OUT+ and OUT− (pins 7 and 11)
VO
DC output voltage
on and mute
−
6.5
−
V
VOO
output offset voltage
on and mute
−
−
100
mV
∆VOO
delta output offset voltage
on ↔ mute
−
−
30
mV
0
−
Vp
V
Mode select input MODE (pin 4)
VI
input voltage range
II
input current
VMODE = 14.4 V
−
−
20
µA
Vth1+
threshold voltage
standby → mute
−
−
2
V
Vth1−
threshold voltage
mute → standby
1
−
−
V
VmsH1
hysteresis (Vth1+ − Vth1−)
−
200
−
mV
Vth2+
threshold voltage
mute → on
−
−
4.2
V
Vth2−
threshold voltage
on → mute
3.3
−
−
V
VmsH2
hysteresis (Vth2+ − Vth2−)
−
200
−
mV
0
−
VP
V
Status I/O STAT (pin 16)
PIN STAT AS INPUT
Vst
input voltage
IstH
HIGH-level input current
VSTAT = 14.4 V
−
−
4
mA
IstL
LOW-level input current
VSTAT = 0 V
−
−
−400
µA
Vth1+
threshold voltage
fast mute → class B
−
−
2
V
Vth1−
threshold voltage
class B → fast mute
1
−
−
V
VstH1
hysteresis (Vth1+ − Vth1−)
−
200
−
mV
Vth2+
threshold voltage
class B → class H
−
−
4.2
V
Vth2−
threshold voltage
class H → class B
3.3
−
−
V
VstH2
hysteresis (Vth2+ − Vth1−)
−
200
−
mV
1998 Apr 07
9
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
SYMBOL
TDA1562Q
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
PIN STAT AS OUTPUT
Ist(mute)
mute acknowledge output voltage
Ist(clB)
2.2
class B operation output current
Vst(clB)
class B operation output voltage
Ist(clH)
class H operation output voltage
Tc(th)
IIst = 15 µAI
−
−
mA
−
0.5
V
−
−
µA
−
3.0
V
−
−
µA
VP − 2.5 −
−
V
−
threshold case temperature sensor
Ist = −140 µA
2.0
−140
class H operation source current
Vst(clH)
Ist = 2.2 mA
−
15
mute acknowledge sink current
Vst(mute)
120
−
°C
−
−
0.6
V
Diagnostic output DIAG (pin 8)
VDIAG
output voltage
RL
load resistance for open load
detection
100
−
−
Ω
Tj(th)
threshold junction temperature
sensor
−
145
−
°C
1998 Apr 07
active LOW
10
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
handbook, full pagewidth
TDA1562Q
on-mode
fast mute
VPH1
Vth−
VP
Vth+
MGL267
Fig.6 Supply voltage transfer characteristic.
handbook, full pagewidth
on-mode
mute
standby
VmsH2
VmsH1
Vth1−
Vth2−
Vth1+
Vms
Vth2+
MGL268
Fig.7 Mode select transfer characteristic.
handbook, full pagewidth
class-H
class-B
fast mute
VstH1
Vth1−
VstH2
Vth2−
Vth1+
Vst
Vth2+
MGL269
Fig.8 Status I/O transfer characteristic.
1998 Apr 07
11
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
AC CHARACTERISTICS
VP = 14.4; RL = 4 Ω; Rs = 0 Ω; f = 1 kHz; Tamb = 25 °C; measurements in accordance with Fig.10; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
16
20
−
W
60
70
−
W
class-H; THD = 0.5%
output power
class-B; THD = 10%
class-H; THD = 10%
Po
45
55
−
W
fro(h)(P)
high frequency power
roll-off
Po (−1 dB); THD = 0.5%;
note 1
−
20
−
kHz
THD
total harmonic distortion
Po = 1 W
−
0.03
−
%
Po = 20 W
−
0.06
−
%
DDD active
−
10
−
%
25
26
27
dB
20
−
−
kHz
90
150
−
kΩ
60
70
−
dB
90
−
dB
Gv
voltage gain
fro(h)(G)
high frequency gain
roll-off
Zi(dif)
differential input
impedance
SVRR
supply voltage ripple
rejection
Gv (−1 dB); note 2
on and mute; note 3
standby; note 3
CMRR
common mode rejection
ratio
on; note 4
70
80
−
dB
ISRR
input signal rejection
ratio
mute; note 5
80
90
−
dB
Vn(o)
noise output voltage
on; note 6
−
100
150
µV
mute; notes 6 and 7
−
60
−
µV
Notes
1. The low frequency power roll-off is determined by the value of the electrolytic lift capacitors.
2. The low frequency gain roll-off is determined by the value of the input coupling capacitors.
3. Supply voltage ripple rejection is measured across RL; Vripple = Vripple max. = 2 VPP.
4. Common mode rejection ratio is measured across RL; Vcm = Vcm max. = 2 VPP. CMMR [dB] = differential gain
(Gv) + common mode attenuation (Ac), (Test setup according Fig. 9; mismatch of input coupling capacitors
excluded).
5. Input signal rejection ratio is measured across RL; Vi = Vi(max) = 2 VPP. ISSR [dB] = different gain (Gv) + mute
attenuation (Am)
6. Noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz.
7. Noise output voltage is independent of source impedance Rs.
1998 Apr 07
12
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
+ VP
handbook, full pagewidth
9
Ci
Ci
VCM
10
supply
7
1
RL
TDA1562
11
2
14
SGND
17
PGND1 PGND2
6
12
GND
MGL270
Fig.9 CMRR test setup.
QUALITY SPECIFICATION
Quality in accordance with “SNW-FQ-611 part E”, if this type is used as an audio amplifier.
1998 Apr 07
13
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mode
select
100 nF
16
4
CLASS-B
CLASS-H
FAST MUTE
1/2*Rs
LIFT-SUPPLY
+
−
75
kΩ
CURRENT
PROTECTION
AMP.
75
kΩ
−
2
+
IN−
AMP.
TDA1562Q
LOAD
DETECTOR
+ VP
10
kΩ
DYNAMIC
DISTORTION
DETECTOR
8
RL =
4Ω
diagnostic
11
OUT−
VP*
14
Vref
15 kΩ
17
OUT+
POWERSTAGE
disable
LIFT-SUPPLY
TEMPERATURE
PROTECTION
reference
voltage
signal GND
13
C2+
Fig.10 Test and application circuit.
12
PGND2
GND
MGL271
TDA1562Q
4700 µF
6
PGND1
Preliminary specification
15
C2−
handbook, full pagewidth
14
FEEDBACK
CIRCUIT
1/2*Rs
7
POWERSTAGE
DIAGNOSTIC
INTERFACE
audio
source
10 µF
disable
VP*
1
IN+
100 nF
9
LOAD DUMP
PROTECTION
TEMPERATURE
SENSOR
STANDBY
MUTE
ON
VP1
Philips Semiconductors
status I/O
5
70 W high efficiency power amplifier
with diagnostic facility
C1+
3
+ VP
TEST AND APPLICATION INFORMATION
1998 Apr 07
C1−
2200
µF
100
nF
VP2
10
4700 µF
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
non-concave
Dh
x
D
Eh
view B: mounting base side
d
A2
B
j
E
A
L3
L
Q
c
1
v M
17
e1
Z
bp
e
e2
m
w M
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A2
bp
c
D (1)
d
Dh
E (1)
e
mm
17.0
15.5
4.6
4.2
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
12.2
11.8
2.54
e1
e2
1.27 5.08
Eh
j
L
L3
m
Q
v
w
x
Z (1)
6
3.4
3.1
12.4
11.0
2.4
1.6
4.3
2.1
1.8
0.8
0.4
0.03
2.00
1.45
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-03-11
97-12-16
SOT243-1
1998 Apr 07
EUROPEAN
PROJECTION
15
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Apr 07
16
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
NOTES
1998 Apr 07
17
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
NOTES
1998 Apr 07
18
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q
NOTES
1998 Apr 07
19
Philips Semiconductors – a worldwide company
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For all other countries apply to: Philips Semiconductors,
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5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA59
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545102/1200/01/pp20
Date of release: 1998 Apr 07
Document order number:
9397 750 03043