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IRLML2502PbF
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HEXFET® Power MOSFET
Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint
Low Profile ( & lt; 1.1mm)
Available in Tape and Reel
Fast Switching
Lead-Free
RoHS Compliant, Halogen-Free
G 1
VDSS = 20V
3 D
S
RDS(on) = 0.045Ω
2
Description
These N-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET® power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in battery and load management.
Micro3™
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3™, is ideal for applications where printed circuit
board space is at a premium. The low profile ( & lt; 1.1mm) of the Micro3
allows it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Standard Pack
Base Part Number
Package Type
IRLML2502TRPbF
Micro3™ (SOT-23)
Form
Quantity
Tape and Reel
Orderable Part Number
3000
IRLML2502TRPbF
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Max.
Units
20
4.2
3.4
33
1.25
0.8
0.01
± 12
-55 to + 150
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
1
Maximum Junction-to-Ambient
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Typ.
Max.
Units
75
100
°C/W
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IRLML2502PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
Parameter
20
–––
–––
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.01
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.035
0.045
–––
0.050
0.080
Conditions
VGS = 0V, ID = 250uA
V/°C Reference to 25°C, ID = 1.0mA
Ω
VGS = 4.5V, ID = 4.2A
VGS = 2.5V, ID = 3.6A
VGS(th)
Gate Threshold Voltage
0.60
–––
1.2
V
ΔVGS(th)
Gate Threshold Voltage Coefficient
–––
-3.2
–––
mV/°C
S
VDS = VGS, ID = 250μA
gfs
Forward Transconductance
5.8
–––
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
25
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Qg
Total Gate Charge
–––
8.0
12
Q gs
Gate-to-Source Charge
–––
1.8
2.7
Q gd
Gate-to-Drain ( " Miller " ) Charge
–––
1.7
2.6
VGS = 5.0V
td(on)
Turn-On Delay Time
–––
7.5
–––
VDD = 10V
tr
Rise Time
–––
10
–––
td(off)
Turn-Off Delay Time
–––
54
–––
tf
Fall Time
–––
26
–––
RD = 10Ω
Ciss
Input Capacitance
–––
740
–––
VGS = 0V
Coss
Output Capacitance
–––
90
–––
Crss
Reverse Transfer Capacitance
–––
66
–––
Min.
Typ.
Max.
IGSS
μA
nA
d
d
VDS = 10V, ID = 4.0A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
VGS = 12V
VGS = -12V
ID = 4.0A
nC
ns
pF
VDS = 10V
d
ID = 1.0A
RG = 6Ω
d
VDS = 15V
ƒ = 1.0MHz
Source-Drain Rating and Characteristics
Parameter
IS
Continuous Source Current
–––
(Body Diode)
ISM
1.3
–––
–––
33
–––
Ã
–––
1.2
Conditions
MOSFET symbol
A
Pulsed Source Current
(Body Diode)
–––
Units
D
showing the
integral reverse
G
p-n junction diode.
VSD
Diode Forward Voltage
V
TJ = 25°C, IS = 1.3A, VGS = 0V
trr
Reverse Recovery Time
–––
16
24
ns
TJ = 25°C, IF = 1.3A
Q rr
Reverse Recovery Charge
–––
8.6
13
nC
di/dt = 100A/μs
d
S
dÃ
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t ≤ 5sec.
Pulse width ≤ 300μs; duty cycle ≤ 2%.
2
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IRLML2502PbF
100
100
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
2.25V
10
20μs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
2.25V
10
1
0.1
100
VDS , Drain-to-Source Voltage (V)
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
V DS = 15V
20μs PULSE WIDTH
2.8
3.2
3.6
4.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
10
100
Fig 2. Typical Output Characteristics
100
2.4
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
2.0
20μs PULSE WIDTH
TJ = 150 °C
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ID = 4.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRLML2502PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1000
800
Ciss
600
400
200
0
Coss
Crss
1
10
10
VGS , Gate-to-Source Voltage (V)
1200
VDS = 10V
8
6
4
2
0
100
ID = 4.0A
0
8
12
16
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
4
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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10us
10
100us
1ms
1
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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100
IRLML2502PbF
ID , Drain Current (A)
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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RDS(on) , Drain-to -Source Voltage ( Ω )
0.05
0.04
Id = 4.0A
0.03
0.02
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
IRLML2502PbF
0.30
VGS = 2.5V
0.20
0.10
VGS = 4.5V
0.00
0
VGS, Gate -to -Source Voltage ( V )
10
20
30
iD , Drain Current ( A )
Fig 11. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
VGS(th), Gate threshold Voltage (V)
1.3
1.1
0.9
0.7
ID = 50μA
ID = 250μA
0.5
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 13. Threshold Voltage Vs. Temperature
6
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40
IRLML2502PbF
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
Y
M
B
O
L
6
5
D
3
6
ccc
2
B
e
A
A1
A2
b
c
E
E1
1
DIMENSIONS
MILLIMET ERS
MAX
MIN
0.89
1.12
0.01
0.10
0.88
1.02
0.30
0.50
0.08
0.20
3.04
2.80
2.10
2.64
1.40
1.20
0.95 BSC
1.90 BSC
0.40
0.60
0.25 BSC
0°
8°
0.10
0.20
0.15
C B A
D
E
E1
e
5
e1
L
L1
0
aaa
e1
bbb
ccc
4
INCHES
MIN
MAX
.036
.044
.0004
.0039
.035
.040
.0119
.0196
.0032
.0078
.111
.119
.083
.103
.048
.055
.0375 BSC
.075 BSC
.0158
.0236
.0118 BSC
0°
8°
.004
.008
.006
H
A A2
L1
3X b
A1
bbb
aaa C
C A B
3 SURF
0
7
3X L
RECOMMENDED F OOTPRINT
NOT ES
1. DIMENS IONING AND T OLERANCING PER ASME Y14.5M-1994.
0.972
3X [.038]
2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES .
2.742
[.1079]
3. CONT ROLLING DIMENS ION: MILLIMET ER.
4 DATUM PLANE H IS LOCATED AT T HE MOLD PART ING LINE.
5 DATUM A AND B T O B E DET ERMINED AT DAT UM PLANE H.
6 DIMENS IONS D AND E1 ARE MEAS URED AT DAT UM PLANE H.
7 DIMENS ION L IS T HE LEAD LENGTH FOR S OLDERING T O A S UBS T RATE.
8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB.
0.95
[.0375]
3X
0.802
[.031]
1.90
[.075]
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
DATE CODE
PART NUMBER
Cu WIRE
HALOGEN FREE
LEAD-FREE
ASSEMBLY LOT CODE
X = PART NUMBER CODE REFERENCE :
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
I = IRLML0030
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
S = IRLML6244
T = IRLML6246
U = IRLML6344
V = IRLML6346
W = IRFML8244
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
YEAR
Y
W
WEEK
1
2011 2001
01
A
2
02
B
2012 2002
3
2013 2003
03
C
4
04
D
2014 2004
5
2015 2005
6
2016 2006
7
2017 2007
8
2018 2008
9
2019 2009
0
24
X
2020 2010
25
Y
26
Z
X = IRLML2244
Y = IRLML2246
Z = IRFML9244
W = (27-52) IF PRECEDED BY A LETTER
WORK
W
Y
YEAR
WEEK
DATE CODE EXAMPLE:
YWW = 432 = DF
YWW = 503 = 5C
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
7
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IRLML2502PbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
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IRLML2502PbF
†
Qualification information
Consumer
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
Micro3™ (SOT-23)
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
Comment
4/24/2014
• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
• Added Qualification table -Qual level " Consumer " on page 9.
• Added bullet point in the Benefits " RoHS Compliant, Halogen -Free " on page 1.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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April 24, 2014