Dziękuję kolego ale to jest CM2N65F A faktycznie zaszła pomyłka. 1126236
UNISONIC TECHNOLOGIES CO., LTD
20N65
Preliminary
Power MOSFET
20A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 20N65 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with planar stripe and DMOS technology. This technology is
specialized in allowing a minimum on-state resistance and superior
switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC 20N65 is universally applied in motor control, UPS, DC
choppers and switch-mode and resonant-mode power supplies.
1
TO-247
FEATURES
* RDS(ON) = 0.45Ω @VGS = 10 V
* High switching speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
20N65L-T47-T
20N65G-T47-T
Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-247
1
G
Pin Assignment
2
3
D
S
Packing
Tube
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QW-R502-731.a
20N65
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
20
A
Continuous
ID
Drain Current (TC=25°C)
Pulsed
IDM
80
A
Avalanche Energy
Single Pulsed(Note 2)
EAS
1200
mJ
Power Dissipation (TC=25°C)
PD
300
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. VDD=50V, Starting TJ=25°С, Peak IAS=20A, L=6mH
THERMAL DATA
PARAMETER
SYMBOL
θJC
Junction to Case
RATINGS
0.42
UNIT
°С/ W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
SYMBOL
Static Drain-Source On-State Resistance
RDS(ON)
BVDSS
IDSS
IGSS
VGS(TH)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=650V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
650
VDS=VGS, ID=250µA
VGS=10V, ID=10A, Pulse test,
t≤300µs, duty cycle d≤2%
2.0
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=520V, ID=10A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VGS=10V, VDS=325V, ID=10A,
Turn-OFF Delay Time
tD(OFF) RG=2Ω (Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS
VGS=0V
Current
Maximum Body-Diode Pulsed Current
ISM
Repetitive
IF=IS, VGS=0V, Pulse test,
Drain-Source Diode Forward Voltage
VSD
t≤300µs, duty cycle d≤2%
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
V
10 µA
+100 nA
-100 nA
4.0
V
0.32 0.45
Ω
4500
420
140
pF
pF
pF
150
29
60
20
43
70
40
170
40
85
40
60
90
60
nC
nC
nC
ns
ns
ns
ns
20
A
80
A
1.5
V
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20N65
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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