Odpowiednikami są dostępne IPD04N03LA oraz IRLR8743PbF SMD https://obrazki.elektroda.pl/4839977600_1637604885_thumb.jpg https://obrazki.elektroda.pl/1529347000_1637605052_thumb.jpg
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04N03LA
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N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
a, e
ID (A)
0.002 at VGS = 10 V
100
0.003 at VGS = 4.5 V
30
90
Qg (Typ)
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2011/65/EU
72 nC
APPLICATIONS
D
• OR-ing
• Server
• DC/DC
TO-252
G
G
D
S
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
Unit
V
100a, e
80e
ID
35.8b, c
TA = 70 °C
A
27b, c
300
Pulsed Drain Current
IDM
Avalanche Current Pulse
IAS
39
EAS
94.8
Single Pulse Avalanche Energy
Continuous Source-Drain Diode Current
L = 0.1 mH
TC = 25 °C
TA = 25 °C
IS
TC = 70 °C
TA = 25 °C
235a
165
PD
W
3.75b, c
2.63b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
3.13b, c
TC = 25 °C
Maximum Power Dissipation
mJ
90a, e
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Symbol
b, d
Maximum Junction-to-Case
Max.
t 10 sec
RthJA
32
40
Steady State
RthJC
0.5
0.6
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1 " x 1 " FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
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Typ.
Unit
°C/W
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
Typ.
Max.
30
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
mV/°C
- 7.5
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
V
35
1.5
2.5
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS 5 V, VGS = 10 V
90
µA
A
VGS = 10 V, ID = 38.8 A
0.002
VGS = 4.5 V, ID = 37 A
0.003
VDS = 15 V, ID = 38.8 A
160
S
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
5201
Ciss
Coss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = 15 V, VGS = 0 V, f = 1 MHz
td(off)
pF
770
VDS = 15 V, VGS = 10 V, ID = 38.8 A
151
227
71.5
103
VDS = 15 V, VGS = 4.5 V, ID = 28.8 A
30
f = 1 MHz
1.4
2.1
18
27
VDD = 15 V, RL = 0.625
ID 24 A, VGEN = 10 V, Rg = 1
11
17
70
nC
105
24
td(on)
tr
1525
tf
10
15
td(on)
55
83
180
270
55
83
12
18
tr
td(off)
VDD = 15 V, RL = 0.67
ID 22.5 A, VGEN = 4.5 V, Rg = 1
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
Body Diode Voltage
VSD
120
TC = 25 °C
ISM
120
IS = 22 A
0.8
1.2
A
V
Body Diode Reverse Recovery Time
trr
52
78
ns
Body Diode Reverse Recovery Charge
Qrr
70.2
105
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C
27
25
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
90
VGS = 10 V thru 4 V
2.4
I D - Drain Current (A)
I D - Drain Current (A)
75
60
45
30
1.8
1.2
TC = 25 °C
0.6
15
VGS = 2 V
0
0.0
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
0
2.5
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
600
0.0060
TC = 25 °C
0.0050
R DS(on) – On-Resistance (Ω)
G fs - Transconductance (S)
500
TC = 125 °C
400
300
TC = - 55 °C
200
0.0040
VGS = 4.5 V
0.0030
VGS = 10 V
0.0020
0.0010
100
0.000
0
0
10
20
30
40
50
60
70
80
90
ID - Drain Current (A)
0
30
45
60
ID - Drain Current (A)
Transconductance
RDS(on) vs. Drain Current
8000
75
90
10
ID = 38.8 A
V GS - Gate-to-Source Voltage (V)
Ciss
6000
C - Capacitance (pF)
15
4000
2000
Coss
1000
Crss
0
0
VDS = 15 V
8
VDS = 24 V
6
4
2
0
6
12
18
24
VDS - Drain-to-Source Voltage (V)
Capacitance
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30
0
30
90
120
150
60
Qg - Total Gate Charge (nC)
Gate Charge
180
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
VGS = 10 V, ID= 38.8 A
VGS = 4.5 V, ID = 27 A
10
1.0
I S - Source Current (A)
R DS(on) - On-Resistance (Normalized)
1.2
0.8
0.6
0.4
1
T J = 150 °C
T J = 25 °C
0.1
0.01
0.2
- 50
0.001
- 25
0
25
50
75
100
150
125
0
175
0.2
0.4
0.6
0.8
1
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Forward Diode Voltage vs. Temperature
2.8
0.005
0.004
2.4
TA = 125 °C
V GS(th) Variance (V)
RDS(on) -On-Resistance (Ω)
ID = 38.8 A
0.003
TA = 25 °C
0.002
ID = 250 µA
2.0
1.6
1.2
0.001
0.000
0
2
4
6
8
10
0.8
- 50 - 25
0
25
50
75
100
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
RDS(on) vs. VGS vs. Temperature
Threshold Voltage
1000
*Limited by rDS (on)
I D - Drain Current (A)
100
10
10 ms
100 ms
1
1s
10 s
dc
0.1
0.01
TA = 25 °C
Single Pulse
0.001
0.1
*VGS
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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125 150
175
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
250
Power Dissipation (W)
300
250
ID - Drain Current (A)
300
200
150
Package Limited
100
50
200
150
100
50
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
TC - Case Temperature (°C)
Current Derating*
150
175
TC - Case Temperature (°C)
Power Derating
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
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1
10
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TO-252AA CASE OUTLINE
E
MILLIMETERS
A
C2
b3
INCHES
H
L
gage plane height (0.5 mm)
0.094
-
0.127
-
0.005
0.64
0.88
0.025
0.035
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.46
0.61
0.018
0.024
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
D
L4
0.086
C2
L5
2.38
C
e1
MAX.
2.18
b2
b2
MIN.
b
e
MAX.
A1
b
MIN.
A
L3
DIM.
5.21
-
0.205
0.265
E
C
A1
6.35
6.73
0.250
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
0.090 BSC
e1
4.56 BSC
0.180 BSC
D1
1.40
1.78
0.055
0.070
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
E1
L
L3
1.14
1.52
0.045
0.060
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
Note
• Dimension L3 is for reference only.
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