Witam jaki mogę dać zamiennik tranzystora D856 do wzmacniacza radia Yamaha . Dodam ze moze być 2SD856 Tranzystor D856 to to samo co 2SD856. Ten sam (nie zamiennik) tranzystor tylko rożnie oznaczany. Odpowiednikiem jest dostępny NTE377
NTE377 (NPN) & NTE378 (PNP)
Silicon Complementary Transistors
Power Amp Driver, Output, Switch
Description:
The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type package designed for general purpose power amplification and switching such as output or driver stages
in applications such as switching regulators, converters, and power amplifiers.
Features:
D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1V Max @ 8A
D Fast Switching Speeds
D Complementary Pairs Simplifies Designs
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Power Dissipation, PD
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Thermal Resistance, Junction–to–Ambient, RΘJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +275°C
Note 1. Pulse Width ≤ 6ms, Duty Cycle ≤ 50%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector Cutoff Current
ICES
VCE = 80V, VBE = 0
–
–
10
µA
Emitter Cutoff Current
IEBO
VEB = 5V
–
–
100
µA
hFE
VCE = 1V, IC = 2A, TJ = +25°C
60
–
–
VCE = 1V, IC = 4A, TJ = +25°C
40
–
–
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 8A, IB = 400mA
–
–
1.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 8A, Ib = 800mA
–
–
1.5
V
VCB = 10V, ftest = 1MHz
–
130
–
pF
–
230
–
pF
–
50
–
MHz
–
40
–
MHz
–
300
–
ns
–
135
–
ns
–
500
–
ns
–
140
–
ns
–
100
–
ns
Dynamic Characteristics
Collector Capacitance
NTE377
Ccb
NTE378
Gain Bandwidth Product
NTE377
fT
IC = 500mA, VCE = 10V, f = 20MHz
NTE378
Switching Times
Delay and Rise Time
NTE377
td + tr
IC = 5A, IB1 = 500mA
NTE378
Storage Time
ts
Fall Time
NTE377
IC = 5A, IB1 = IB2 = 500mA
tf
NTE378
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500 (12.7)
Max
.250
(6.35)
Max
.500 (12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab