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NIKO-SEM
PK600BA
N-Channel Enhancement Mode
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
D
D
D
D
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
30V
9.5mΩ
40A
G
#1 S
S
S
S
G. GATE
D. DRAIN
S. SOURCE
G
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
TC = 25 °C
3
TC = 100 °C
Pulsed Drain Current
40
ID
1
25
IDM
TA = 25 °C
Continuous Drain Current
ID
TA = 70 °C
Avalanche Current
100
8.6
IAS
Avalanche Energy
TC = 25 °C
Power Dissipation
16.2
PD
TC = 100 °C
TA = 25 °C
Power Dissipation
18
EAS
L = 0.1mH
Operating Junction & Storage Temperature Range
Tj, Tstg
mJ
27.8
W
11
2
PD
TA = 70 °C
A
10.7
W
1.3
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
2
SYMBOL
TYPICAL
MAXIMUM
RJA
63
RJC
4.5
UNITS
°C / W
1
Pulse width limited by maximum junction temperature.
2
The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3
Package limitation current is 20A.
2
K-14-2
REV 1.1
1
NIKO-SEM
PK600BA
N-Channel Enhancement Mode
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
LIMITS
UNIT
TYP MAX
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250A
30
VGS(th)
VDS = VGS, ID = 250A
1.3
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±20V
Zero Gate Voltage Drain Current
IDSS
Gate Threshold Voltage
Drain-Source On-State
1
Resistance
Forward Transconductance
2.3
±100 nA
VDS = 24V, VGS = 0V
1
VDS = 20V, VGS = 0V, TJ = 55 °C
10
VGS = 4.5V, ID =9A
7.4
9.5
62
A
13.5
VDS = 5V, ID = 9.5A
gfs
9.7
VGS = 10V, ID = 9.5A
RDS(ON)
1
V
1.75
mΩ
S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Charge
Qg
Gate-Source Charge
2
2
2
112
134
74
104
1.4
2.8
42
14
17
5.8
7.3
8.8
1.6
2
2.4
3.7
5.2
td(on)
2
2
pF
Ω
nC
13
tr
Turn-Off Delay Time
Fall Time
Qgs
89
2.2
VDS = 15V , VGS = 10V,
ID = 9.5A
Qgd
Turn-On Delay Time
Rise Time
2
VGS = 4.5V
729
11
VGS = 0V, VDS = 0V, f = 1MHz
608
44
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 10V
2
Gate-Drain Charge
486
VDS = 15V ,
37
td(off)
ID 9.5A, VGS = 10V, RGEN =6Ω
48
tf
nS
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage
3
1
IS
25
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1.1
IF = 9.5A, VGS = 0V
IF = 9.5A, dlF/dt = 100A / S
A
V
5.9
11.7
18
nS
1.5
3
4.5
nC
Pulse test : Pulse Width 300 sec, Duty Cycle 2％.
Independent of operating temperature.
3
Package limitation current is 20A.
1
2
K-14-2
REV 1.1
2
NIKO-SEM
PDFN 5x6P
Halogen-Free & Lead-Free
Output Characteristics
Transfer Characteristics
40
VGS=10V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=4V
32
VGS=3.5V
ID, Drain-To-Source Current(A)
ID, Drain-To-Source Current(A)
40
24
VGS=3V
16
8
0
32
24
-20℃
16
25℃
8
125℃
0
0
1
2
3
4
5
0
VDS, Drain-To-Source Voltage(V)
1
2
3
4
5
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
On-Resistance VS Temperature
800
1.8
700
1.6
C , Capacitance(pF)
Normalized Drain to Source
ON-Resistance
PK600BA
N-Channel Enhancement Mode
Field Effect Transistor
1.4
1.2
1.0
CISS
600
500
400
300
200
0.8
VGS=10V
ID=9.5A
COSS
100
CRSS
0.6
0
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
TJ , Junction Temperature(˚C)
Source-Drain Diode Forward Voltage
100
VDS=15V
ID=9.5A
8
IS , Source Current(A)
VGS , Gate-To-Source Voltage(V)
10
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
Characteristics
30
6
4
2
0
10
150℃
25℃
1
0.1
0
3
6
9
12
15
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-To-Drain Voltage(V)
Qg , Total Gate Charge(nC)
K-14-2
REV 1.1
3
NIKO-SEM
PK600BA
N-Channel Enhancement Mode
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
Safe Operating Area
Single Pulse Maximum Power Dissipation
1000
25
Operation in This Area
is Limited by RDS(ON)
↓
Single Pulse
RθJA = 63˚C/W
TA=25˚C
20
Power(W)
ID , Drain Current(A)
100
10
1
1ms
15
10
10ms
NOTE :
1.VGS= 10V
2.TA=25˚C
3.RθJA = 63˚C/W
4.Single Pulse
0.1
100ms
5
DC
0.01
0.1
1
10
0
0.001
100
0.01
VDS, Drain-To-Source Voltage(V)
0.1
1
10
100
Single Pulse Time(s)
Transient Thermal Response Curve
Transient Thermal Resistance
r(t) , Normalized Effective
10
1
Duty cycle=0.5
Notes
0.2
0.1
0.1
0.05
0.02
1.Duty cycle, D= t1 / t2
2.RthJA = 63 ℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
T1 , Square Wave Pulse Duration[sec]
K-14-2
REV 1.1
4