Witajcie. Mam ja telewizorek Thomson 40FS3013 (płyta MPLE31N65-2A REV 1.2), w którym spalił się tranzystor kluczujący w zasilaczu - MDF10N65B. Jako zamiennik dobrałem STP10NK80ZFP. Zakładam, że mosfet pociągnął za sobą układ scalony przetwornicy - RT7736B. Niestety nigdzie nie można go kupić. Najbliższy jaki udało mi się znaleźć to AP3103 (wydaje mi się, że ochrona przed zanikiem napięcia nie jest niezbędna). Pasują wyprowadzenia, zasilanie, częstotliwość pracy. Schematu tv też nie znalazłem, ale doszedłem, że monitorowane napięcie wyjściowe wynosi 12V. Wiem, że muszę usunąć wszystko co wychodzi z nóżki 3 i w to miejsce dać rezystor R7 = 100Ω do masy, żeby zapewnić wymaganą częstotliwość pracy 65kHz. Co zrobić z pinami feedback i sense, żeby przynajmniej wystartować bezpiecznie? Zwiększyć rezystor R15, przy transoptorze? Nowy tranzystor ma Rds(on) bardzo podobną do starego, ale nowy scalak ma mniejsze napięcie maks. na pinie sense (0,85V vs 1.1V). A może czegoś nie dostrzegam i dobrane komponenty nie będą działać?
N-Channel MOSFET 650V, 10.0A, 1.0Ω
General Description
Features
The MDF10N65B MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent
quality.
MDF10N65B is suitable device for SMPS, high Speed
switching and general purpose applications.
VDS = 650V
ID = 10.0A
RDS(ON) ≤ 1.0Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
G
TO-220F
MDF Series
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
Gate-Source Voltage
650
V
VGSS
ID
o
TC=100 C
(1)
IDM
o
TC=25 C
A
5.0*
A
40*
A
47.7
Repetitive Avalanche Energy(1)
(3)
(4)
W
0.38
W/oC
15
mJ
dv/dt
Derate above 25 oC
Single Pulse Avalanche Energy
V
EAR
Power Dissipation
Peak Diode Recovery dv/dt
±30
10.0*
TC=25oC
Continuous Drain Current
Pulsed Drain Current
Unit
VDSS
Drain-Source Voltage
Rating
4.5
V/ns
mJ
PD
EAS
212
TJ, Tstg
-55~150
Symbol
Rating
RθJA
62.5
RθJC
Junction and Storage Temperature Range
2.62
o
C
* Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Jun. 2010 Version 1.2
(1)
(1)
1
Unit
o
C/W
MagnaChip Semiconductor Ltd.
MDF10N65B N-channel MOSFET 650V
MDF10N65B
Part Number
Temp. Range
MDF10N65BTH
Package
-55~150 C
Packing
RoHS Status
TO-220F
o
Tube
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
650
-
-
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
2.0
-
4.0
Drain Cut-Off Current
IDSS
VDS = 650V, VGS = 0V
-
-
1
μA
Gate Leakage Current
IGSS
VGS = ±30V, VDS = 0V
-
-
100
nA
0.85
1.0
Ω
-
10.6
-
S
-
29.3
-
-
7.0
-
Drain-Source ON Resistance
Forward Transconductance
RDS(ON)
VGS = 10V, ID = 4A
gfs
VDS = 30V, ID = 4A
V
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = 520V, ID = 8.0A, VGS = 10V
(3)
nC
Gate-Drain Charge
Qgd
-
11.2
-
Input Capacitance
Ciss
-
1202
-
Reverse Transfer Capacitance
Crss
-
7.08
-
Output Capacitance
Coss
-
128.3
-
Turn-On Delay Time
td(on)
-
19.4
-
tr
-
48
-
-
96.5
-
tf
-
49
-
IS
-
8
-
A
-
-
1.4
V
-
326
-
ns
-
5.9
-
μC
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 325V, ID = 8.0A,
RG = 25Ω(3)
pF
Ns
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Note :
1.
2.
3.
4.
IS = 8.0A, VGS = 0V
IF = 8.0A, dl/dt = 100A/μs(3)
Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
ISD ≤8.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
L=7.0mH, IAS=8.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Jun. 2010 Version 1.2
2
MagnaChip Semiconductor Ltd.
MDF10N65B N-channel MOSFET 650V
Ordering Information
MDF10N65B N-channel MOSFET 650V
18
Vgs=5.0V
=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10.0V
=15.0V
ID,Drain Current [A]
14
12
10
VGS=10.0V
1.0
RDS(ON) [Ω ]
16
8
6
4
VGS=20V
0.8
Notes
1. 250㎲ Pulse Test
2. TC=25
2
℃
0
0
5
10
15
2
4
6
8
VDS,Drain-Source Voltage [V]
12
14
16
18
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
1.20
3.0
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
※ Notes :
1. VGS = 10 V
2. ID = 4A
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
10
ID,Drain Current [A]
2.0
1.5
1.0
0.5
※ Notes :
1.15
1. VGS = 0 V
2. ID = 250㎂
1.10
1.05
1.00
0.95
0.90
0.85
0.0
0.80
-50
-25
0
25
50
75
100
125
150
-50
-25
0
o
75
100
125
150
Fig.4 Breakdown Voltage Variation vs.
Temperature
※ Notes :
* Notes ;
1. Vds=30V
IDR
Reverse Drain Current [A]
1. VGS = 0 V
2.250s Pulse test
ID(A)
10
150
℃
25
℃
-55
℃
1
4
6
10
25
150
℃
℃
1
0.0
8
VGS [V]
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain Voltage [V]
Fig.5 Transfer Characteristics
Jun. 2010 Version 1.2
50
TJ, Junction Temperature [ C]
Fig.3 On-Resistance Variation with
Temperature
2
25
o
TJ, Junction Temperature [ C]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
MagnaChip Semiconductor Ltd.
VGS, Gate-Source Voltage [V]
※ Note : ID = 8.0A
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500
Coss
130V
8
2000
325V
Capacitance [pF]
520V
6
4
Ciss
1500
1000
※ Notes ;
Crss
2
1. VGS = 0 V
2. f = 1 MHz
500
0
0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
1
30
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
2
Operation in This Area
is Limited by R DS(on)
10 s
100 s
1
1 ms
1s
10
10
0
D=0.5
0
10 ms
100 ms
10
Zθ JC
(t),
Thermal Response
ID, Drain Current [A]
10
DC
-1
0.2
0.1
0.05
-1
0.02
10
※ Notes :
0.01
Single Pulse
TJ=Max rated
TC=25
single pulse
-2
10
-1
10
0
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC + TC
(t)
RΘ JC
=2.62 /W
℃
℃
10
10
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
10
MDF10N65B N-channel MOSFET 650V
10
10
1
10
-2
2
10
-5
10
VDS, Drain-Source Voltage [V]
-4
-3
10
-2
10
-1
10
0
10
1
10
10
t1, Rectangular Pulse Duration [sec]
Fig.9 Maximum Safe Operating Area
Fig.10 Transient Thermal Response Curve
14000
8
single Pulse
RthJC = 2.62 /W
TC = 25
12000
℃
7
℃
ID, Drain Current [A]
Power (W)
10000
8000
6000
4000
6
5
4
3
2
2000
1
0
1E-5
1E-4
1E-3
0.01
0.1
1
0
25
10
75
100
125
150
℃
Fig.12 Maximum Drain Current vs. Case
Temperature
Fig.11 Single Pulse Maximum Power
Dissipation
Jun. 2010 Version 1.2
50
TC, Case Temperature [ ]
Pulse Width (s)
4
MagnaChip Semiconductor Ltd.
MDF10N65B N-channel MOSFET 650V
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Sym
bol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
￠R
Jun. 2010 Version 1.2
Min
4.50
0.63
1.15
0.33
15.47
9.60
Nom
Max
4.93
0.91
1.47
0.63
16.13
10.71
2.54
2.34
6.48
12.24
2.79
2.52
3.10
3.00
2.84
6.90
13.72
3.67
2.96
3.50
3.55
5
MagnaChip Semiconductor Ltd.
MDF10N65B N-channel MOSFET 650V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Jun. 2010 Version 1.2
6
MagnaChip Semiconductor Ltd.