Witam. Po zwarciu w wiązce przewodów zasilających silnik, uszkodzeniu uległy tranzystory MOSFET: K3475N. Parametry w załączniku. Poszukuję zamiennika dostępnego w Polsce. Dziękuję i pozdrawiam.
Spec. No. : HM7001
Issued Date : 2015.10.16
Revised Date : P1544
Page No. : 1 / 9
N-Channel Logic Level Enhancement Mode Power MOSFET
K3475N
BVDSS
V
ID@VGS=10V,TC=25°C
100% ΔVds TESTED!
70
70
A
RDSON(MAX)
8.4
mΩ
VGS=10V,ID=40A
100% UIS TESTED!
Features
●
●
●
●
●
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
Description
The K3475N is the high cell density trenched
N-ch MOSFETs, which provide excellent RDSON
and gate charge for most of the synchronous
buck converter applications. The K3475N meet the RoHS and Green Product requirement, 100% EAS
guaranteed with full function reliability approved.
Equivalent Circuit
Outline
TO-220/TO-220F
Package Marking and Ordering Information
Device Marking
Device
Device Package
K3475N
K3475N
TO-220/TO-220F
Reel Size
Tape width
Quantity
1000
-------------------------------------------------------------------------------------------------------Copyright © 2017 HM SEMICONDUCTOR CO., LTD For Pentop
V1.0
Spec. No. : HM7001
Issued Date : 2015.10.16
Revised Date : P1544
Page No. : 2 / 9
Table 1.
Thermal Characteristic
Symbol
Parameter
RJC
Table 2.
Max
Thermal Resistance,Junction-to-Case
Unit
℃/W
1.77
Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS
V
±25
Gate-Source Voltage (VDS=0V)
Unit
70
Drain-Source Voltage (VGS=0V）
VGS
Value
V
Drain Current-Continuous(Tc =25℃)
70
Drain Current-Continuous(Tc =100℃)
47.6
Drain Current-Continuous@ Current-Pulsed
272
A
PD
Maximum Power Dissipation(Tc=25℃)
85
W
EAS
Single Pulse Avalanche Energy
360
mJ
Operating Junction and Storage Temperature Range
-55 To 150
℃
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
ID (DC)
A
IDM (pluse)
TJ,TSTG
Max
Unit
On/Off States
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
Zero Gate Voltage Drain Current(Tc=25℃)
VDS=68V,VGS=0V
1
μA
Zero Gate Voltage Drain Current(Tc=100℃)
VDS=68V,VGS=0V
10
μA
Gate-Body Leakage Current
VGS=±
25V,VDS=0V
±
100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250μA
4
V
RDS(ON)
Drain-Source On-State Resistance
8.4
mΩ
BVDSS
70
V
IDSS
IGSS
VGS=10V, ID=40A
2
7
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
2708
353
PF
PF
9
Reverse Transfer Capacitance
f=1.0MHz
PF
168
VDS=25V,VGS=0V
nS
11
nS
19
nS
23
nS
Switching Times
td(on)
tr
td(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=30V,ID=2A,
RL=15Ω,VGS=10V,
RG=2.5Ω
-------------------------------------------------------------------------------------------------------Copyright © 2017 HM SEMICONDUCTOR CO., LTD For Pentop
V1.0
Spec. No. : HM7001
Issued Date : 2015.10.16
Revised Date : P1544
Page No. : 3 / 9
Qg
Qgs
VDS=50V,
Total Gate Charge
Gate-Source Charge
nC
13.4
nC
26.2
VGS=10V,
64
nC
ID=40A
Qgd
Gate-Drain Charge
Source-Drain Diode Characteristics
ISD
Source-Drain Current(Body Diode)
68
A
ISDM
Pulsed Source-Drain Current(Body Diode)
272
A
VSD
Forward On Voltage
ISD=40A,VGS=0V
0.79
trr
Reverse Recovery Time
TJ=25℃IF=75A,
34
nS
Qrr
Reverse Recovery Charge
di/dt=100A/μs
69
nC
ton
Forward Turn-on Time
0.95
V
Intrinsic turn-on time is negligible(turn-on is dominated
by LS +LD )
Notes:
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width≦300us , duty cycle≦2%
3.The EAS data shows Max. rating . The test condition is VDD =25V,VGS =10V,L=0.1mH
4.The power dissipation is limited by 175℃ junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
-------------------------------------------------------------------------------------------------------Copyright © 2017 HM SEMICONDUCTOR CO., LTD For Pentop
V1.0
Spec. No. : HM7001
Issued Date : 2015.10.16
Revised Date : P1544
Page No. : 4 / 9
TEST CIRCUIT
-------------------------------------------------------------------------------------------------------Copyright © 2017 HM SEMICONDUCTOR CO., LTD For Pentop
V1.0
Spec. No. : HM7001
Issued Date : 2015.10.16
Revised Date : P1544
Page No. : 5 / 9
TYPICAL CHARACTERISTICS
VGS(Volts)
VGS(Volts)
-------------------------------------------------------------------------------------------------------Copyright © 2017 HM SEMICONDUCTOR CO., LTD For Pentop
V1.0
Spec. No. : HM7001
Issued Date : 2015.10.16
Revised Date : P1544
Page No. : 6 / 9
-------------------------------------------------------------------------------------------------------Copyright © 2017 HM SEMICONDUCTOR CO., LTD For Pentop
V1.0
Spec. No. : HM7001
Issued Date : 2015.10.16
Revised Date : P1544
Page No. : 7 / 9
TO-220F PACKAGE INFORMATION
-------------------------------------------------------------------------------------------------------Copyright © 2017 HM SEMICONDUCTOR CO., LTD For Pentop
V1.0
Spec. No. : HM7001
Issued Date : 2015.10.16
Revised Date : P1544
Page No. : 8 / 9
TO-220 PACKAGE INFORMATION
-------------------------------------------------------------------------------------------------------Copyright © 2017 HM SEMICONDUCTOR CO., LTD For Pentop
V1.0
Spec. No. : HM7001
Issued Date : 2015.10.16
Revised Date : P1544
Page No. : 9 / 9
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written approval of HMsemi.
• HMsemi reserves the right to make changes to its products without notice.
• HMsemi semiconductor products are not warranted to be suitable for use in LifeSupport Applications, or systems.
• HMsemi assumes no liability for any consequence of customer product design,
infringement of patents, or application assistance.
-------------------------------------------------------------------------------------------------------Copyright © 2017 HM SEMICONDUCTOR CO., LTD For Pentop
V1.0