QB304 to raczej tranzystor 2N4401, npn.
2N4401
NPN Transistor
Plastic-Encapsulate Transistors
Elektronische Bauelemente
RoHS Compliant Product
TO-92
A suffix of " -C " specifies halogen & lead-free
3.5 ±0.2
4.55±0.2
4.5±0.2
Features
Power Dissipation
MAXIMUM RATINGS* TA=25 oC unless otherwise noted
Symbol
Parameter
VCBO
Units
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
600
mA
PC*
Collector Power dissipation
0.625
W
TJ
Junction Temperature
150
o
Tstg
Storage Temperature
-55to +150
o
RθJA
Thermal Resistance, junction to Ambient
357
o
ELECTRICAL CHARACTERISTICS ( Tamb=25 C
14.3 ±0.2
Value
0.43 +0.08
–0.07
0.46 +0.1
–0.1
(1.27 Typ.)
C
+0.2
1.25–0.2
C
1 2 3
C /mW
o
unless
1: Emitter
2: Base
3: Collector
2.54 ±0.1
otherwise
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
IC=100µA , IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA , IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
6
V
Collector cut-off current
ICBO
VCB=35V, IE=0
0.1
µA
Collector cut-off current
ICEO
VCE=35V, IB=0
0.5
µA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
µA
hFE(1)
VCE=1V, IC= 0.1mA
20
hFE(2)
VCE=1V, IC=1mA
40
hFE(3)
VCE=1V, IC= 10mA
50
hFE(4)
VCE=1V, IC=150mA
100
hFE(5)
VCE=2V, IC= 500mA
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Test
specified)
conditions
UNIT
300
IC=150 mA, IB=15mA
0.4
V
VCE(sat)2
IC=500 mA, IB=50mA
0.75
V
VBE(sat)1
IC=150 mA, IB=15mA
0.95
V
VBE(sat)2
IC=500 mA, IB=50mA
fT
Output Capacitance
Cob
VCE= 10V, IC= 20mA,
f=100MHz
VCB=10V, IE= 0,f=1MHz
Delay time
td
VCC=30V, VBE=2V
Rise time
tr
IC=150mA, IB1=15mA
Storage time
tS
VCC=30V, IC=150mA
Fall time
tf
IB1= IB2= 15mA
01-Jun-2002 Rev. A
MAX
VCE(sat)1
Transition frequency
http://www.SeCoSGmbH.com/
MIN
V
250
MHz
6.5
pF
15
nS
20
nS
225
nS
30
nS
Any changing of specification will not be informed individual
Page 1 of 2
2N4401
Elektronische Bauelemente
Typical Characteristics
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
NPN Transistor
Plastic-Encapsulate Transistors
2N4401
Any changing of specification will not be informed individual
Page 2 of 2