DMFP75N075B.pdf

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Witam. Proszę o pomoc w znalezieniu oznaczenia zamiennika tranzystora: DMFP75N075B . Tranzystory takie mam w sterowniku silnika rowerowego BLDC pracującego na 24V. Zamieszczam również notę katalogową.


DMFP75N075B
HEXFET
Dynamic dv/dt Rating
175°C Operating Temperature
Fast switching
Ease of Paralleling
Simple Drive Requirements

(R)

Power MOSFET

VDSS = 75V
ID25 = 75A
RDS(ON) = 11.0 m?

Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50watts. The low
thermal resistance and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.

Pin1-Gate
Pin2-Drain
Pin3-Source

Absolute Maximum Ratings
Parameter

Max.

Continuous Drain Current, VGS@10V

75

ID@TC=100°C Continuous Drain Current, VGS@10V

60

Pulsed Drain Current

Units

300

ID@TC=25°C
IDM

(2)

(1)

A

250

W

Linear Derating Factor

1.5

W/°C

VGS

Gate-to-Source Voltage

?20

V

EAR

Single Pulse Avalanche Energy

23

mJ

dv/dt

Peak Diode Recovery dv/dt

5.9

V/ns

TJ
TSTG

Operating Junction and
Storage Temperature Range

PD@TC=25°C Power Dissipation

(3)

(4)

-55 to +175

?°C

300(1.6mm from case)

Soldering Temperature, for 10 seconds

10 Ibf . in(1.1N . m)

Mounting Torque,6-32 or M3 screw

Thermal Resistance
Parameter

Min.

Typ.

Max.

R?JC

Junction-to-case

--

--

0.65

R?CS

Case-to-Sink, Flat, Greased Surface

--

0.50

--

R?JA

Junction-to-Ambient

--

--

Units

62

?°C /W

1

DMFP75N075B
HEXFET

(R)

Power MOSFET

Electrical Characteristics @TJ=25 °C (unless otherwise specified)
?
Parameter

Min.

Typ.

Drain-to-Source Breakdown Voltage

75

--

--

Breakdown Voltage Temp. Coefficient

--

0.074

--

RDS(on)

Static Drain-to-Source On-resistance

--

--

11.0

VGS(th)

Gate Threshold Voltage

2.0

--

4.0

V

VDS=VGS, ID=250?A

gfs

Forward Transconductance

25

--

--

S

VDS=25V,ID=40A

IDSS

Drain-to-Source Leakage current

--

--

10

--

--

250

Gate-to-Source Forward leakage

--

--

100

Gate-to-Source Reverse leakage

--

--

-100

Qg

Total Gate Charge

--

--

160

Qgs

Gate-to-Source charge

--

--

29

Qgd

Gate-to-Drain ( " Miller " ) charge

--

--

55

td(on)
tr
td(off)
tf

Turn-on Delay Time

--

13

--

Rise Time

--

64

--

Turn-Off Delay Time

--

49

--

Fall Time

--

48

--

LD

Internal Drain Inductance

--

4.5

--

LS

Internal Source Inductance

--

7.5

--

Ciss

Input Capacitance

--

3820

--

Coss

Output Capacitance

--

610

--

Crss

Reverse Transfer Capacitance

--

130

--

V(BR)DSS
?V(BR)DSS/
?TJ

IGSS

Max. Units
V

Test Conditions
VGS=0V,ID=250uA

V/°C Reference to 25°C,ID=1mA
m? VGS=10V,ID=40A

?A
nA

(5)

(5)

VDS=75V,VGS=0V
VDS=60V,VGS=0V,TJ=150°C
VGS=20V
VGS=-20V

ID=40A
nC VDS=60V
VGS=10V See Fig.6 and 13(5)

nS

VDD=38V
ID=40A
RG=2.5?
VGS=10V See Figure 10(5)

Between lead,
6mm(0.25in.)
nH from package
and center of
die contact
VGS=0V
pF VDS=25V
f=1.0MHZ See Figure 5

Source-Drain Ratings and Characteristics
Parameter

Min.

IS

Continuous Source Current
(Body Diode)

.

ISM

Pulsed Source Current
(Body Diode) (2)

.

VSD

Typ.

Max.

--

--

Units

75

Test Conditions

A

MOSFET symbol
showing the
integral reverse
p-n junction diode.

--

--

300

Diode Forward Voltage

--

--

1.2

V

TJ=25°C,IS=40A,VGS=0V

trr

Reverse Recovery Time

--

100

150

nS

Qrr

Reverse Recovery Charge

--

410

610

nC

TJ=25°C,IF=40A
di/dt=100A/?s (5)

ton Forward Turn-on Time
Notes:

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 75A.
(2) Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11)

(1)

(5)

(4)

Starting TJ = 25°C, L = 370mH, RG = 25?, IAS = 40A,
VGS=10V (See Figure 12)
ISD <= 40A, di/dt <= 300A/?s, VDD <= V(BR)DSS,TJ <= 175°C

(5)

Pulse width <= 400?s; duty cycle <= 2%.

(3)

2


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