IXFK44N60.pdf

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HiPerFETTM
Power MOSFETs

IXFX 44N60
IXFK 44N60

VDSS
ID25
RDS(on)

Single MOSFET Die

= 600 V
=
44 A
= 130 mW

trr ? 250 ns

Symbol

Test Conditions

Maximum Ratings

VDSS
VDGR

T J = 25C to 150C
T J = 25C to 150C; RGS = 1 MW

600
600

V
V

VGS
VGSM

Continuous
Transient

?20
?30

V
V

ID25
IDM
IAR

TC = 25C
TC = 25C, pulse width limited by TJM
TC = 25C

44
176
44

A
A
A

EAR
EAS

TC = 25C
TC = 25C

60
3

PLUS 247TM (IXFX)

mJ
J

dv/dt

IS ? IDM, di/dt ? 100 A/ms, VDD ? VDSS
T J ? 150C, RG = 2 W

PD

TC = 25C

5

W

TJ

-55 ... +150
150
-55 ... +150

C
C

300

C

G
D

(TAB)
S

C

TJM
Tstg

(TAB)
D

TO-264 AA (IXFK)

V/ns

560

G

TL

1.6 mm (0.063 in.) from case for 10 s

Md

Mounting torque

Weight

TO-264

0.4/6

PLUS 247
TO-264

Nm/lb.in.
6
10

g
g

Symbol

Test Conditions

VDSS

VGS = 0 V, ID = 3mA

600

V

VGS(th)

VDS = VGS, ID = 8mA

2.5

4.5 V

IGSS

VGS = ?20 V, VDS = 0

IDSS

VDS = VDSS
VGS = 0 V

RDS(on)

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

VGS = 10 V, ID = 0.5 o ID25
Note 1

D = Drain
TAB = Drain

Features
o International standard packages
o Low RDS (on) HDMOSTM process
o Rugged polysilicon gate cell structure
o Unclamped Inductive Switching (UIS)
rated
o Low package inductance
- easy to drive and to protect
o Fast intrinsic rectifier

Applications
o DC-DC converters
o Battery chargers
o Switched-mode and resonant-mode
power supplies
o DC choppers
o AC motor control
o Temperature and lighting controls

?100 nA
TJ = 25C
TJ = 125C

IXYS reserves the right to change limits, test conditions, and dimensions.

(C) 2000 IXYS All rights reserved

G = Gate
S = Source

100 mA
2 mA
130 mW

Advantages
o PLUS 247TM package for clip or spring
mounting
o Space savings
o High power density

98611B (7/00)

1-4

IXFK 44N60
IXFX 44N60
Symbol

Test Conditions

gfs

VDS = 10 V; ID = 0.5 o ID25

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.
Note 1

Coss

tf
Qg(on)
Qgs

VGS = 10 V, VDS = 0.5 o VDSS, ID = 0.5 o ID25

Qgd

ns

50

ns
ns
ns
nC

60

nC

65

RG = 1 W (External),

pF

330

td(off)

pF

40

VGS = 10 V, VDS = 0.5 o VDSS, ID = 0.5 o ID25

1000

100

td(on)
tr

pF

40

Crss

S

330

VGS = 0 V, VDS = 25 V, f = 1 MHz

45
8900

Ciss

30

nC

RthJC

0.22
0.15

RthCK

Source-Drain Diode
Symbol

Test Conditions

IS

VSD

K/W

44

A

Repetitive;
pulse width limited by TJM

176

IF = IS, VGS = 0 V, Note 1

1.3

A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R

Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83

Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190

V

250

Dim.

A

ns

t rr
QRM

K/W

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

VGS = 0 V

ISM

PLUS247TM (IXFX) Outline

IF = 50A,-di/dt = 100 A/ms, VR = 100 V

mC

8

IRM

1.4

TO-264 AA (IXFK) Outline

A

Note: 1. Pulse test, t ? 300 ms, duty cycle d ? 2 %
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T

(C) 2000 IXYS All rights reserved

Millimeter
Min.
Max.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025

5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
BSC
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83

Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072

2-4

IXFK 44N60
IXFX 44N60
Figure 1. Output Characteristics at 25OC

Figure 2. Output Characteristics at 125OC
80

100
O

TJ = 25 C

60

60

ID - Amperes

ID - Amperes

80

VGS = 10V
9V
8V
7V

TJ = 125OC

VGS = 10V
9V
8V
7V
6V
5V

40

6V

5V

40

20

20

0

0

0

4

8

12

16

20

0

24

4

8

12

16

20

24

VDS - Volts

VDS - Volts

Figure 3. RDS(on) normalized to 15A/25OC vs. ID

Figure 4. RDS(on) normalized to 15A/25OC vs. TJ

2.4

2.4
VGS = 10V

TJ = 125OC

RDS(ON) - Normalized

RDS(ON) - Normalized

VGS = 10V

2.0

1.6
TJ = 25OC

1.2

0.8
0

20

40

60

80

2.0
ID = 44A

1.6
ID = 22A

1.2

0.8
25

100

50

ID - Amperes

75

100

150

TJ - Degrees C

Figure 5. Drain Current vs. Case Temperature

Figure 6. Admittance Curves

60

60

50

50

40

ID - Amperes

ID - Amperes

125

30
20
10

30
TJ = 25oC

20
10

0

-50 -25

TJ = 125oC

40

0

25

50

75

TC - Degrees C

(C) 2000 IXYS All rights reserved

100 125 150

0
3.0

3.5

4.0

4.5

5.0

5.5

VGS - Volts

3-4

IXFK 44N60
IXFX 44N60
Figure 7. Gate Charge

Figure 8. Capacitance Curves

12

10000

Capacitance - pF

8

VGS - Volts

Ciss

VDS = 300V
ID = 30A
IG = 10mA

10

6
4

Coss

1000

Crss

2
0

f = 1MHz

0

50 100 150 200 250 300 350 400

100

0

5

10

15

Gate Charge - nC

20

25

30

35

40

VDS - Volts

Figure 9. Forward Voltage Drop of the Intrinsic Diode
100

ID - Amperes

80
TJ = 125OC

60
40

TJ = 25OC

20

0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Volts

Figure 10. Transient Thermal Resistance

R(th)JC - K/W

1.00

0.10

0.01

0.00
10-4

10-3

10-2

10-1

100

101

Pulse Width - Seconds

(C) 2000 IXYS All rights reserved

4-4

This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.


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