CEP83A3.pdf

UPS Ever duo II potrzebny zamiennik trazystora CEP83A3

Witam seredcznie kolegów. Czy ktoś z was spotkał sie już z takim trazystorem CEP83A3. Cena tego cacka 82 zł - skłania mnie to szukania jakiegoś zamienika. Pracuje to w zasilaczu UPS Ever Duo II. Załączam PDF z notą tranzystora.


CEP83A3/CEB83A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 100A, RDS(ON) = 5.3mOhm @VGS = 10V.
RDS(ON) = 8.0mOhm @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.

D

Lead free product is acquired.
TO-220 & TO-263 package.

D

G
G

S
CEB SERIES
TO-263(DD-PAK)

G
D
S

ABSOLUTE MAXIMUM RATINGS
Parameter

CEP SERIES
TO-220

Tc = 25 C unless otherwise noted
Symbol
Limit
30

Units
V

VGS

?20

V

ID

100

A

IDM

400

A

100

W

Drain-Source Voltage

VDS

Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed

S

a

Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C

PD

0.67

W/ C

Single Pulsed Avalanche Energy d

EAS

875

mJ

Single Pulsed Avalanche Current d

IAS

35

A

TJ,Tstg

-55 to 175

C

Symbol

Limit

Units

Operating and Store Temperature Range

Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case

R?JC

1.5

C/W

Thermal Resistance, Junction-to-Ambient

R?JA

62.5

C/W

Rev 1.

2005.August

http://www.cetsemi.com
4 - 178

CEP83A3/CEB83A3
Electrical Characteristics
Parameter

Tc = 25 C unless otherwise noted
Symbol

Test Condition

Min

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250uA

30

Zero Gate Voltage Drain Current

IDSS

Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse

Typ

Max

Units

VDS = 30V, VGS = 0V

1

uA

IGSSF

VGS = 20V, VDS = 0V

100

nA

IGSSR

VGS = -20V, VDS = 0V

-100

nA

Off Characteristics
V

On Characteristics b
Gate Threshold Voltage

VGS(th)

Static Drain-Source

RDS(on)

On-Resistance
Forward Transconductance
Dynamic Characteristics

gFS

VGS = VDS, ID = 250uA

3

V

VGS = 10V, ID = 50A

1
4.2

5.3

mOhm

VGS = 4.5V, ID = 40A

6.0

8.0

mOhm

VDS = 10V, ID = 15A

27

S

9500

pF

800

pF

300

pF

c

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS = 15V, VGS = 0V,
f = 1.0 MHz

Switching Characteristics c
Turn-On Delay Time

td(on)

Turn-On Rise Time

tr

Turn-Off Delay Time

td(off)

25.7
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6Ohm

50

ns

10

20

ns

128

200

ns

Turn-Off Fall Time

tf

34

70

ns

Total Gate Charge

Qg

50

65

nC

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS = 15V, ID = 16A,
VGS = 5V

20.8

nC

19

nC

Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current

IS

Drain-Source Diode Forward Voltage b

VSD

90
VGS = 0V, IS = 20A

Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width & lt; 300us, Duty Cycle & lt; 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ohm, Starting TJ = 25 C

4 - 179

A

1.5

V

4

CEP83A3/CEB83A3
50

100

80

ID, Drain Current (A)

ID, Drain Current (A)

VGS=10,8,6,4V

60

VGS=3V
40

20

40

30

20
25 C
10
TJ=125 C

0

0

1

2

3

-55 C

0

4

0

1

2

3

4

5

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

Ciss

10000

C, Capacitance (pF)

RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)

12000

8000
6000
4000
Coss

2000

Crss

0
0

5

10

15

20

25

2.2
1.9

ID=50A
VGS=10V

1.6
1.3
1.0
0.7
0.4
-100

-50

0

50

100

150

200

1.2

Figure 4. On-Resistance Variation
with Temperature

VDS=VGS

IS, Source-drain current (A)

1.3

TJ, Junction Temperature( C)

Figure 3. Capacitance

VTH, Normalized
Gate-Source Threshold Voltage

VDS, Drain-to-Source Voltage (V)

ID=250uA

1.1
1.0
0.9
0.8
0.7
0.6
-50

VGS=0V

10

10

10
-25

0

25

50

75

100

125

2

1

0

0.4

150

0.6

0.8

1.0

1.2

1.4

TJ, Junction Temperature( C)

VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation
with Temperature

Figure 6. Body Diode Forward Voltage
Variation with Source Current

4 - 180

10

10

VDS=15V
ID=16A

6

4

2

0
0

3

4

RDS(ON)Limit

8

ID, Drain Current (A)

VGS, Gate to Source Voltage (V)

CEP83A3/CEB83A3

20

40

60

80

10

DC
10

10

100

100us
1ms
10ms

2

1

TC=25 C
TJ=150 C
Single Pulse

0

10

-1

10

0

10

1

10

Qg, Total Gate Charge (nC)

VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge

Figure 8. Maximum Safe
Operating Area

VDD
t on
RL

V IN
D

td(off)

tf
90%

90%

VOUT
VOUT

VGS
RGEN

toff
tr

td(on)

10%

INVERTED

10%

G
90%

S

VIN

50%

50%

10%

PULSE WIDTH

Figure 10. Switching Waveforms

r(t),Normalized Effective
Transient Thermal Impedance

Figure 9. Switching Test Circuit

10

0

D=0.5

0.2

10

-1

PDM

0.1

t1

0.05

t2

0.02
0.01
Single Pulse

10

1. R?JC (t)=r (t) * R?JC
2. R?JC=See Datasheet
3. TJM-TC = P* R?JC (t)
4. Duty Cycle, D=t1/t2

-2

10

-5

10

-4

10

-3

10

-2

10

-1

Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve

4 - 181

10

0

10

1

2


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